Principles of metallic field effect transistor (METFET)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Novel type of a field effect transistor (FET) is described. A metallic channel of a metallic nanotube FET is proposed to be switched ON/OFF by applying electric fields of a local gate. Very inhomogeneous electric fields may lower the nanotube symmetry and open a band gap, as shown by tight-binding calculations.

Original languageEnglish (US)
Title of host publication2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
EditorsM. Laudon, B. Romanowicz
Pages37-40
Number of pages4
StatePublished - Nov 2 2004
Event2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States
Duration: Mar 7 2004Mar 11 2004

Publication series

Name2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Volume2

Other

Other2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
CountryUnited States
CityBoston, MA
Period3/7/043/11/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Rotkin, V., & Hess, K. (2004). Principles of metallic field effect transistor (METFET). In M. Laudon, & B. Romanowicz (Eds.), 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 (pp. 37-40). (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004; Vol. 2).