Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS

Q. M. Ramasse, N. Alem, O. V. Yazyev, A. Zettl, C. T. Pan, R. R. Nair, R. Jalil, R. Zan, U. Bangert, C. R. Seabourne, A. J. Scott, K. S. Novoselov

Research output: Contribution to journalArticle

Original languageEnglish (US)
Pages (from-to)1526-1527
Number of pages2
JournalMicroscopy and Microanalysis
Volume18
Issue numberS2
DOIs
StatePublished - Jul 2012

All Science Journal Classification (ASJC) codes

  • Instrumentation

Cite this

Ramasse, Q. M., Alem, N., Yazyev, O. V., Zettl, A., Pan, C. T., Nair, R. R., Jalil, R., Zan, R., Bangert, U., Seabourne, C. R., Scott, A. J., & Novoselov, K. S. (2012). Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS. Microscopy and Microanalysis, 18(S2), 1526-1527. https://doi.org/10.1017/S1431927612009488