Probing phonons in nonpolar semiconducting nanowires with Raman spectroscopy

Kofi W. Adu, Martin D. Williams, Molly Reber, Ruwantha Jayasingha, Humberto R. Gutierrez, Gamini U. Sumanasekera

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Abstract

We present recent developments in Raman probe of confined optical and acoustic phonons in nonpolar semiconducting nanowires, with emphasis on Si and Ge. First, a review of the theoretical spatial correlation phenomenological model widely used to explain the downshift and asymmetric broadening to lower energies observed in the Raman profile is given. Second, we discuss the influence of local inhomogeneous laser heating and its interplay with phonon confinement on Si and Ge Raman line shape. Finally, acoustic phonon confinement, its effect on thermal conductivity, and factors that lead to phonon damping are discussed in light of their broad implications on nanodevice fabrication.

Original languageEnglish (US)
Article number264198
JournalJournal of Nanotechnology
DOIs
StatePublished - Jan 1 2012

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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    Adu, K. W., Williams, M. D., Reber, M., Jayasingha, R., Gutierrez, H. R., & Sumanasekera, G. U. (2012). Probing phonons in nonpolar semiconducting nanowires with Raman spectroscopy. Journal of Nanotechnology, [264198]. https://doi.org/10.1155/2012/264198