Abstract
We report scanning Kelvin probe microscopy (SKPM) of single crystal difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.
Original language | English (US) |
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Article number | 203305 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 20 |
DOIs | |
State | Published - May 17 2010 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)