Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy

Lucile C. Teague, Oana D. Jurchescu, Curt A. Richter, Sankar Subramanian, John E. Anthony, Thomas N. Jackson, David J. Gundlach, James G. Kushmerick

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

We report scanning Kelvin probe microscopy (SKPM) of single crystal difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.

Original languageEnglish (US)
Article number203305
JournalApplied Physics Letters
Volume96
Issue number20
DOIs
Publication statusPublished - May 17 2010

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Teague, L. C., Jurchescu, O. D., Richter, C. A., Subramanian, S., Anthony, J. E., Jackson, T. N., ... Kushmerick, J. G. (2010). Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy. Applied Physics Letters, 96(20), [203305]. https://doi.org/10.1063/1.3389493