Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy

Lucile C. Teague; Oana D. Jurchescu; Curt A. Richter; Sankar Subramanian; John E. Anthony; Thomas N. Jackson; David J. Gundlach; James G. Kushmerick

doi:10.1063/1.3389493

Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy

Lucile C. Teague, Oana D. Jurchescu, Curt A. Richter, Sankar Subramanian, John E. Anthony, Thomas N. Jackson, David J. Gundlach, James G. Kushmerick

Materials Research Institute (MRI)

Research output: Contribution to journal › Article

18 Scopus citations

Abstract

We report scanning Kelvin probe microscopy (SKPM) of single crystal difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.

Original language	English (US)
Article number	203305
Journal	Applied Physics Letters
Volume	96
Issue number	20
DOIs	https://doi.org/10.1063/1.3389493
Publication status	Published - May 17 2010

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All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Teague, L. C., Jurchescu, O. D., Richter, C. A., Subramanian, S., Anthony, J. E., Jackson, T. N., ... Kushmerick, J. G. (2010). Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy. Applied Physics Letters, 96(20), [203305]. https://doi.org/10.1063/1.3389493

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Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy. / Teague, Lucile C.; Jurchescu, Oana D.; Richter, Curt A.; Subramanian, Sankar; Anthony, John E.; Jackson, Thomas N.; Gundlach, David J.; Kushmerick, James G.

In: Applied Physics Letters, Vol. 96, No. 20, 203305, 17.05.2010.

Research output: Contribution to journal › Article

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10.1063/1.3389493