Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy

Lucile C. Teague; Oana D. Jurchescu; Curt A. Richter; Sankar Subramanian; John E. Anthony; Thomas N. Jackson; David J. Gundlach; James G. Kushmerick

doi:10.1063/1.3389493

Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy

Lucile C. Teague, Oana D. Jurchescu, Curt A. Richter, Sankar Subramanian, John E. Anthony, Thomas N. Jackson, David J. Gundlach, James G. Kushmerick

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We report scanning Kelvin probe microscopy (SKPM) of single crystal difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.

Original language	English (US)
Article number	203305
Journal	Applied Physics Letters
Volume	96
Issue number	20
DOIs	https://doi.org/10.1063/1.3389493
State	Published - May 17 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3389493

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@article{2b3084e93a364731bc6361898a6fda25,

title = "Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy",

abstract = "We report scanning Kelvin probe microscopy (SKPM) of single crystal difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.",

author = "Teague, {Lucile C.} and Jurchescu, {Oana D.} and Richter, {Curt A.} and Sankar Subramanian and Anthony, {John E.} and Jackson, {Thomas N.} and Gundlach, {David J.} and Kushmerick, {James G.}",

year = "2010",

month = may,

day = "17",

doi = "10.1063/1.3389493",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "20",

}

Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy. / Teague, Lucile C.; Jurchescu, Oana D.; Richter, Curt A.; Subramanian, Sankar; Anthony, John E.; Jackson, Thomas N.; Gundlach, David J.; Kushmerick, James G.

In: Applied Physics Letters, Vol. 96, No. 20, 203305, 17.05.2010.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy

AU - Teague, Lucile C.

AU - Jurchescu, Oana D.

AU - Richter, Curt A.

AU - Subramanian, Sankar

AU - Anthony, John E.

AU - Jackson, Thomas N.

AU - Gundlach, David J.

AU - Kushmerick, James G.

PY - 2010/5/17

Y1 - 2010/5/17

N2 - We report scanning Kelvin probe microscopy (SKPM) of single crystal difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.

AB - We report scanning Kelvin probe microscopy (SKPM) of single crystal difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.

UR - http://www.scopus.com/inward/record.url?scp=77952979516&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952979516&partnerID=8YFLogxK

U2 - 10.1063/1.3389493

DO - 10.1063/1.3389493

M3 - Article

AN - SCOPUS:77952979516

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 203305

ER -