Proceedings of the 1995 E-MRS Spring Meeting

C. W. Nam, A. Tanabe, S Ashok

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Thermal anneal activation of defects resulting from atomic hydrogen treatment of Si wafers in an electron cyclotron resonance (ECR) plasma system have been studied. Following short-term (4-12 min), low-temperature hydrogenation, n- and p-Si wafers were annealed over the temperature range 300-750°C for 20 min. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements on samples annealed at 450°C and above. The concentrations of these deep levels reach a maximum at anneal temperatures around 500°C and drop substantially beyond 750°C. This phenomenon appears to be unrelated to the presence of oxygen in Si and is of potential importance in silicon processing technology.

Original languageEnglish (US)
Title of host publicationSymposium N
Subtitle of host publicationCarbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors
PublisherElsevier Science S.A.
Edition1-3
StatePublished - Jan 1 1996

Publication series

NameMaterials science & engineering. B, Solid-state materials for advanced technology
Number1-3
VolumeB36
ISSN (Print)0921-5107

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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