Proceedings of the 1995 E-MRS Spring Meeting

C. W. Nam, A. Tanabe, S Ashok

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Thermal anneal activation of defects resulting from atomic hydrogen treatment of Si wafers in an electron cyclotron resonance (ECR) plasma system have been studied. Following short-term (4-12 min), low-temperature hydrogenation, n- and p-Si wafers were annealed over the temperature range 300-750°C for 20 min. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements on samples annealed at 450°C and above. The concentrations of these deep levels reach a maximum at anneal temperatures around 500°C and drop substantially beyond 750°C. This phenomenon appears to be unrelated to the presence of oxygen in Si and is of potential importance in silicon processing technology.

Original languageEnglish (US)
Title of host publicationSymposium N
Subtitle of host publicationCarbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors
PublisherElsevier Science S.A.
Edition1-3
StatePublished - Jan 1 1996

Publication series

NameMaterials science & engineering. B, Solid-state materials for advanced technology
Number1-3
VolumeB36
ISSN (Print)0921-5107

Fingerprint

congressional reports
Hydrogenation
hydrogenation
wafers
Deep level transient spectroscopy
majority carriers
Electron cyclotron resonance
Silicon
electron cyclotron resonance
Temperature
Hydrogen
Chemical activation
traps
activation
Oxygen
Plasmas
Defects
temperature
defects
silicon

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nam, C. W., Tanabe, A., & Ashok, S. (1996). Proceedings of the 1995 E-MRS Spring Meeting. In Symposium N: Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors (1-3 ed.). (Materials science & engineering. B, Solid-state materials for advanced technology; Vol. B36, No. 1-3). Elsevier Science S.A..
Nam, C. W. ; Tanabe, A. ; Ashok, S. / Proceedings of the 1995 E-MRS Spring Meeting. Symposium N: Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors. 1-3. ed. Elsevier Science S.A., 1996. (Materials science & engineering. B, Solid-state materials for advanced technology; 1-3).
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Nam, CW, Tanabe, A & Ashok, S 1996, Proceedings of the 1995 E-MRS Spring Meeting. in Symposium N: Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors. 1-3 edn, Materials science & engineering. B, Solid-state materials for advanced technology, no. 1-3, vol. B36, Elsevier Science S.A.

Proceedings of the 1995 E-MRS Spring Meeting. / Nam, C. W.; Tanabe, A.; Ashok, S.

Symposium N: Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors. 1-3. ed. Elsevier Science S.A., 1996. (Materials science & engineering. B, Solid-state materials for advanced technology; Vol. B36, No. 1-3).

Research output: Chapter in Book/Report/Conference proceedingChapter

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Nam CW, Tanabe A, Ashok S. Proceedings of the 1995 E-MRS Spring Meeting. In Symposium N: Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors. 1-3 ed. Elsevier Science S.A. 1996. (Materials science & engineering. B, Solid-state materials for advanced technology; 1-3).