Process damage and contamination effects for shallow Si implanted GaAs

H. Barratte, G. J. Scilla, Thomas Nelson Jackson, A. J. Fleischman, H. J. Hovel, F. Cardone

Research output: Contribution to journalArticle

Abstract

During the fabrication of refractory gate MESFET's, the sputter deposition of a WSix gate and Reactive Ion Etching (RIE) of the gate pattern can lead to surface damage and contamination. To study these effects, GaAs with a shallow silicon implant was subjected to RIE alone or to both a WSix sputter deposition and RIE at self-biases under 200V was healed out by 800°C SiN4 capped furnace annealing. Sheet resistance and Hall mobility measurements correlated with the diffusion of compensating impurities into the bulk of the GaAs. The SIMS profiles indicated that the major contaminants (Fe, Cr, Ni, Cu, V,...) were initially present in the W targets and were thus present in the WSix layers. These contaminants were left on the surface of the GaAs after the gate RIE and were driven into the bulk on capped annealing. An HCI etch was found to remove the contaminants, resulting in lower sheet resistances for implanted and processed GaAs. Refractory gate submicron MESFET's with reduced access resistances were fabricated.

Original languageEnglish (US)
Pages (from-to)377-382
Number of pages6
JournalProceedings - The Electrochemical Society
Volume90
Issue number9
StatePublished - 1990

Fingerprint

Reactive ion etching
Contamination
Impurities
Sputter deposition
Sheet resistance
Refractory materials
Annealing
Hall mobility
Human computer interaction
Secondary ion mass spectrometry
Furnaces
Fabrication

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Barratte, H., Scilla, G. J., Jackson, T. N., Fleischman, A. J., Hovel, H. J., & Cardone, F. (1990). Process damage and contamination effects for shallow Si implanted GaAs. Proceedings - The Electrochemical Society, 90(9), 377-382.
Barratte, H. ; Scilla, G. J. ; Jackson, Thomas Nelson ; Fleischman, A. J. ; Hovel, H. J. ; Cardone, F. / Process damage and contamination effects for shallow Si implanted GaAs. In: Proceedings - The Electrochemical Society. 1990 ; Vol. 90, No. 9. pp. 377-382.
@article{809c34ad22064a36ac8171feab948307,
title = "Process damage and contamination effects for shallow Si implanted GaAs",
abstract = "During the fabrication of refractory gate MESFET's, the sputter deposition of a WSix gate and Reactive Ion Etching (RIE) of the gate pattern can lead to surface damage and contamination. To study these effects, GaAs with a shallow silicon implant was subjected to RIE alone or to both a WSix sputter deposition and RIE at self-biases under 200V was healed out by 800°C SiN4 capped furnace annealing. Sheet resistance and Hall mobility measurements correlated with the diffusion of compensating impurities into the bulk of the GaAs. The SIMS profiles indicated that the major contaminants (Fe, Cr, Ni, Cu, V,...) were initially present in the W targets and were thus present in the WSix layers. These contaminants were left on the surface of the GaAs after the gate RIE and were driven into the bulk on capped annealing. An HCI etch was found to remove the contaminants, resulting in lower sheet resistances for implanted and processed GaAs. Refractory gate submicron MESFET's with reduced access resistances were fabricated.",
author = "H. Barratte and Scilla, {G. J.} and Jackson, {Thomas Nelson} and Fleischman, {A. J.} and Hovel, {H. J.} and F. Cardone",
year = "1990",
language = "English (US)",
volume = "90",
pages = "377--382",
journal = "Proceedings - The Electrochemical Society",
issn = "0161-6374",
number = "9",

}

Barratte, H, Scilla, GJ, Jackson, TN, Fleischman, AJ, Hovel, HJ & Cardone, F 1990, 'Process damage and contamination effects for shallow Si implanted GaAs', Proceedings - The Electrochemical Society, vol. 90, no. 9, pp. 377-382.

Process damage and contamination effects for shallow Si implanted GaAs. / Barratte, H.; Scilla, G. J.; Jackson, Thomas Nelson; Fleischman, A. J.; Hovel, H. J.; Cardone, F.

In: Proceedings - The Electrochemical Society, Vol. 90, No. 9, 1990, p. 377-382.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Process damage and contamination effects for shallow Si implanted GaAs

AU - Barratte, H.

AU - Scilla, G. J.

AU - Jackson, Thomas Nelson

AU - Fleischman, A. J.

AU - Hovel, H. J.

AU - Cardone, F.

PY - 1990

Y1 - 1990

N2 - During the fabrication of refractory gate MESFET's, the sputter deposition of a WSix gate and Reactive Ion Etching (RIE) of the gate pattern can lead to surface damage and contamination. To study these effects, GaAs with a shallow silicon implant was subjected to RIE alone or to both a WSix sputter deposition and RIE at self-biases under 200V was healed out by 800°C SiN4 capped furnace annealing. Sheet resistance and Hall mobility measurements correlated with the diffusion of compensating impurities into the bulk of the GaAs. The SIMS profiles indicated that the major contaminants (Fe, Cr, Ni, Cu, V,...) were initially present in the W targets and were thus present in the WSix layers. These contaminants were left on the surface of the GaAs after the gate RIE and were driven into the bulk on capped annealing. An HCI etch was found to remove the contaminants, resulting in lower sheet resistances for implanted and processed GaAs. Refractory gate submicron MESFET's with reduced access resistances were fabricated.

AB - During the fabrication of refractory gate MESFET's, the sputter deposition of a WSix gate and Reactive Ion Etching (RIE) of the gate pattern can lead to surface damage and contamination. To study these effects, GaAs with a shallow silicon implant was subjected to RIE alone or to both a WSix sputter deposition and RIE at self-biases under 200V was healed out by 800°C SiN4 capped furnace annealing. Sheet resistance and Hall mobility measurements correlated with the diffusion of compensating impurities into the bulk of the GaAs. The SIMS profiles indicated that the major contaminants (Fe, Cr, Ni, Cu, V,...) were initially present in the W targets and were thus present in the WSix layers. These contaminants were left on the surface of the GaAs after the gate RIE and were driven into the bulk on capped annealing. An HCI etch was found to remove the contaminants, resulting in lower sheet resistances for implanted and processed GaAs. Refractory gate submicron MESFET's with reduced access resistances were fabricated.

UR - http://www.scopus.com/inward/record.url?scp=0025596615&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025596615&partnerID=8YFLogxK

M3 - Article

VL - 90

SP - 377

EP - 382

JO - Proceedings - The Electrochemical Society

JF - Proceedings - The Electrochemical Society

SN - 0161-6374

IS - 9

ER -

Barratte H, Scilla GJ, Jackson TN, Fleischman AJ, Hovel HJ, Cardone F. Process damage and contamination effects for shallow Si implanted GaAs. Proceedings - The Electrochemical Society. 1990;90(9):377-382.