Process Damage and Contamination Effects for Shallow Si Implanted GaAs

H. Baratte, A. J. Fleischman, G. J. Scilla, Thomas Nelson Jackson, H. J. Hovel, F. Cardone

Research output: Contribution to journalArticle

Abstract

During the fabrication of refractory gate MESFETs, the sputter deposition of a WSix gate and reactive ion etching (RIE) of the gate pattern can lead to surface damage and contamination. To study these effects, GaAs with a shallow silicon implant was subjected to RIE alone or to both a WSix sputter deposition and RIE then annealed. The GaAs surface damage due to the WSix sputter deposition and RIE at self-bias under 200V was healed out by 800°C SiNx capped furnace annealing. Sheet resistance and Hall mobility measurements correlated with the diffusion of compensating impurities into the bulk of the GaAs. SIMS profiles indicated that the major contaminants (Fe, Cr, Ni, Cu, V) were initially present in the W targets and were thus present in the WSix layers. These contaminants were left on the surface of the GaAs after the gate RIE and were driven into the bulk on capped annealing. An HCl etch was found to remove the contaminants, resulting in lower sheet resistances for implanted and processed GaAs. Refractory gate submicron MESFETs fabricated using an HCl etch after gate RIE showed reduced access resistance.

Original languageEnglish (US)
Pages (from-to)219-222
Number of pages4
JournalJournal of the Electrochemical Society
Volume138
Issue number1
DOIs
StatePublished - 1991

Fingerprint

Reactive ion etching
contamination
Contamination
etching
damage
Sputter deposition
Impurities
contaminants
ions
Sheet resistance
refractories
Refractory materials
field effect transistors
Annealing
Hall mobility
annealing
Secondary ion mass spectrometry
secondary ion mass spectrometry
furnaces
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrochemistry

Cite this

Baratte, H. ; Fleischman, A. J. ; Scilla, G. J. ; Jackson, Thomas Nelson ; Hovel, H. J. ; Cardone, F. / Process Damage and Contamination Effects for Shallow Si Implanted GaAs. In: Journal of the Electrochemical Society. 1991 ; Vol. 138, No. 1. pp. 219-222.
@article{f56d60a4b4b242d3b666526507a94568,
title = "Process Damage and Contamination Effects for Shallow Si Implanted GaAs",
abstract = "During the fabrication of refractory gate MESFETs, the sputter deposition of a WSix gate and reactive ion etching (RIE) of the gate pattern can lead to surface damage and contamination. To study these effects, GaAs with a shallow silicon implant was subjected to RIE alone or to both a WSix sputter deposition and RIE then annealed. The GaAs surface damage due to the WSix sputter deposition and RIE at self-bias under 200V was healed out by 800°C SiNx capped furnace annealing. Sheet resistance and Hall mobility measurements correlated with the diffusion of compensating impurities into the bulk of the GaAs. SIMS profiles indicated that the major contaminants (Fe, Cr, Ni, Cu, V) were initially present in the W targets and were thus present in the WSix layers. These contaminants were left on the surface of the GaAs after the gate RIE and were driven into the bulk on capped annealing. An HCl etch was found to remove the contaminants, resulting in lower sheet resistances for implanted and processed GaAs. Refractory gate submicron MESFETs fabricated using an HCl etch after gate RIE showed reduced access resistance.",
author = "H. Baratte and Fleischman, {A. J.} and Scilla, {G. J.} and Jackson, {Thomas Nelson} and Hovel, {H. J.} and F. Cardone",
year = "1991",
doi = "10.1149/1.2085543",
language = "English (US)",
volume = "138",
pages = "219--222",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "1",

}

Baratte, H, Fleischman, AJ, Scilla, GJ, Jackson, TN, Hovel, HJ & Cardone, F 1991, 'Process Damage and Contamination Effects for Shallow Si Implanted GaAs', Journal of the Electrochemical Society, vol. 138, no. 1, pp. 219-222. https://doi.org/10.1149/1.2085543

Process Damage and Contamination Effects for Shallow Si Implanted GaAs. / Baratte, H.; Fleischman, A. J.; Scilla, G. J.; Jackson, Thomas Nelson; Hovel, H. J.; Cardone, F.

In: Journal of the Electrochemical Society, Vol. 138, No. 1, 1991, p. 219-222.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Process Damage and Contamination Effects for Shallow Si Implanted GaAs

AU - Baratte, H.

AU - Fleischman, A. J.

AU - Scilla, G. J.

AU - Jackson, Thomas Nelson

AU - Hovel, H. J.

AU - Cardone, F.

PY - 1991

Y1 - 1991

N2 - During the fabrication of refractory gate MESFETs, the sputter deposition of a WSix gate and reactive ion etching (RIE) of the gate pattern can lead to surface damage and contamination. To study these effects, GaAs with a shallow silicon implant was subjected to RIE alone or to both a WSix sputter deposition and RIE then annealed. The GaAs surface damage due to the WSix sputter deposition and RIE at self-bias under 200V was healed out by 800°C SiNx capped furnace annealing. Sheet resistance and Hall mobility measurements correlated with the diffusion of compensating impurities into the bulk of the GaAs. SIMS profiles indicated that the major contaminants (Fe, Cr, Ni, Cu, V) were initially present in the W targets and were thus present in the WSix layers. These contaminants were left on the surface of the GaAs after the gate RIE and were driven into the bulk on capped annealing. An HCl etch was found to remove the contaminants, resulting in lower sheet resistances for implanted and processed GaAs. Refractory gate submicron MESFETs fabricated using an HCl etch after gate RIE showed reduced access resistance.

AB - During the fabrication of refractory gate MESFETs, the sputter deposition of a WSix gate and reactive ion etching (RIE) of the gate pattern can lead to surface damage and contamination. To study these effects, GaAs with a shallow silicon implant was subjected to RIE alone or to both a WSix sputter deposition and RIE then annealed. The GaAs surface damage due to the WSix sputter deposition and RIE at self-bias under 200V was healed out by 800°C SiNx capped furnace annealing. Sheet resistance and Hall mobility measurements correlated with the diffusion of compensating impurities into the bulk of the GaAs. SIMS profiles indicated that the major contaminants (Fe, Cr, Ni, Cu, V) were initially present in the W targets and were thus present in the WSix layers. These contaminants were left on the surface of the GaAs after the gate RIE and were driven into the bulk on capped annealing. An HCl etch was found to remove the contaminants, resulting in lower sheet resistances for implanted and processed GaAs. Refractory gate submicron MESFETs fabricated using an HCl etch after gate RIE showed reduced access resistance.

UR - http://www.scopus.com/inward/record.url?scp=0025954130&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025954130&partnerID=8YFLogxK

U2 - 10.1149/1.2085543

DO - 10.1149/1.2085543

M3 - Article

VL - 138

SP - 219

EP - 222

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 1

ER -