Process-induced damage - a study of hydrogen and deuterium passivation

Sanjay Rangan, Srikanth Krishnan, S Ashok

Research output: Contribution to conferencePaper

5 Scopus citations

Abstract

A comparative study of the anneal efficiencies of deuterium (D2) and hydrogen (H2) in passivating the interface defects for plasma damaged MOSFET's has been done. Experimental results reveals that D2 annealed devices show enhanced passivation of interface states (Dit), with a decrease in charge pumping current of 15% less than H2 annealed devices. These devices also show higher transconductance (Gm) improvements and better threshold voltage (Vt) recovery, with increased hot carrier resistance, compared to the H2 annealed ones. Temperature based anneals indicate that, while Dit and Gm improve with increasing temperature, Vt recovery is independent of it, indicating that the threshold voltage shifts are possibly due to oxide charge. The interface traps in the plasma-damaged device have been monitored using random telegraph signal (RTS), 1/f noise and charge pumping (CP).

Original languageEnglish (US)
Pages213-216
Number of pages4
StatePublished - Dec 1 1998
EventProceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID - Honolulu, HI, USA
Duration: Jun 4 1998Jun 5 1998

Other

OtherProceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID
CityHonolulu, HI, USA
Period6/4/986/5/98

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Rangan, S., Krishnan, S., & Ashok, S. (1998). Process-induced damage - a study of hydrogen and deuterium passivation. 213-216. Paper presented at Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID, Honolulu, HI, USA, .