Process integration of an interlevel dielectric (ILDO) module using a building-in reliability approach

Ronald E. Paulsen, Carl S. Kyono, Yun Wang, Kevin M. Klein, I. S. Lim, S. Tinkler, B. Bellamak, David W. Odle, Zhixu Zhou, P. Dahl, Mark Giovanetto, Jitendra Makwana, S. Patel, Chris Reno, Patrick M. Lenahan, Curt A. Billman

Research output: Contribution to journalArticle

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Abstract

Process integration is approached from a built-in reliability perspective in order to develop a pre-metall interlevel dielectric (ILDO) module which may be integrated into a submicron CMOS process with embedded nonvolatile memory. The approach involves developing a fundamental understanding of the process parameters that modulate parasitics and impact reliability. The benefit of such an approach is a relatively simple process integration while achieving a highly manufacturable and reliable process. Several ILDO films have been characterized to understand the physical and chemical composition, process parameter dependencies, and gettering properties in order to define a process window from which to integrate the most manufacturable process.

Original languageEnglish (US)
Pages (from-to)655-664
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume45
Issue number3
DOIs
StatePublished - Dec 1 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Paulsen, R. E., Kyono, C. S., Wang, Y., Klein, K. M., Lim, I. S., Tinkler, S., Bellamak, B., Odle, D. W., Zhou, Z., Dahl, P., Giovanetto, M., Makwana, J., Patel, S., Reno, C., Lenahan, P. M., & Billman, C. A. (1998). Process integration of an interlevel dielectric (ILDO) module using a building-in reliability approach. IEEE Transactions on Electron Devices, 45(3), 655-664. https://doi.org/10.1109/16.661227