Process monitoring using surface charge profiling (SCP) method

Jerzy Ruzyllo, P. Roman, J. Staffa, I. Kashkoush, E. Kamieniecki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

This paper is concerned with the method of surface charge profiling (SCP) developed for in-line monitoring of front- end processes in semiconductor manufacturing. In this study a commercial SCP system is used to monitor wafer cleans in terms of oxide/hydrogen coverage of Si surfaces following cleaning with emphasis on HF last cleaning sequences. Moreover, metal contamination of bare silicon surfaces and deactivation of boron dopant in the near-surface region of p-type Si wafers are monitored. Finally, the unique capability of SCP in monitoring time-dependent evolution of characteristics of Si surfaces exposed to various ambients is demonstrated.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsArmando Iturralde, Te-Hua Lin
Pages162-173
Number of pages12
StatePublished - Dec 1 1996
EventProcess, Equipment, and Materials Control in Integrated Circuit Manufacturing II - Austin, TX, USA
Duration: Oct 16 1996Oct 17 1996

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2876

Other

OtherProcess, Equipment, and Materials Control in Integrated Circuit Manufacturing II
CityAustin, TX, USA
Period10/16/9610/17/96

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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