Process-structure-property relations of micron thick Gd 2O 3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD)

Daniel A. Grave, Zachary R. Hughes, Joshua Alexander Robinson, Thomas P. Medill, Matthew J. Hollander, Anna L. Stump, Michael Labella, Xiaojun Weng, Douglas Edward Wolfe

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Thick polycrystalline gadolinium oxide (Gd 2O 3) films up to 11μm in thickness were deposited via reactive electron beam-physical vapor deposition (EB-PVD) on silicon (111) substrates for use in neutron radiation detection. The effects of coating thickness, substrate temperature, and oxygen flow on film structural, electrical and optical properties were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), capacitance-voltage (C-V) measurements, and ultraviolet-visible (UV-Vis) spectroscopy. Films were characterized as either monoclinic or mixed monoclinic and cubic phase depending on deposition parameters. Increasing the deposition temperature resulted in increased film crystallinity and cubic phase volume while decreasing the O 2 flow rate resulted in increased volume of the monoclinic phase. Evidence of a thickness dependent crystallography is also presented. Electrical property measurements showed thin film dielectric constant could be tailored between 12 and 20 at 1MHz frequency by decreasing the oxygen flow rate at deposition temperatures of 250°C which is attributed to an increased presence of the monoclinic phase and increased film density. Band gap values were calculated from transmission measurements and ranged between 5.44 and 5.96eV.

Original languageEnglish (US)
Pages (from-to)3094-3103
Number of pages10
JournalSurface and Coatings Technology
Volume206
Issue number13
DOIs
StatePublished - Feb 25 2012

Fingerprint

Physical vapor deposition
Electron beams
vapor deposition
electron beams
Electric properties
flow velocity
electrical properties
Flow rate
Oxygen
Capacitance measurement
Crystallography
Gadolinium
Voltage measurement
Ultraviolet visible spectroscopy
oxygen
Silicon
Substrates
gadolinium
Temperature
electrical measurement

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Grave, Daniel A. ; Hughes, Zachary R. ; Robinson, Joshua Alexander ; Medill, Thomas P. ; Hollander, Matthew J. ; Stump, Anna L. ; Labella, Michael ; Weng, Xiaojun ; Wolfe, Douglas Edward. / Process-structure-property relations of micron thick Gd 2O 3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD). In: Surface and Coatings Technology. 2012 ; Vol. 206, No. 13. pp. 3094-3103.
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Process-structure-property relations of micron thick Gd 2O 3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD). / Grave, Daniel A.; Hughes, Zachary R.; Robinson, Joshua Alexander; Medill, Thomas P.; Hollander, Matthew J.; Stump, Anna L.; Labella, Michael; Weng, Xiaojun; Wolfe, Douglas Edward.

In: Surface and Coatings Technology, Vol. 206, No. 13, 25.02.2012, p. 3094-3103.

Research output: Contribution to journalArticle

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AU - Grave, Daniel A.

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AU - Robinson, Joshua Alexander

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AU - Hollander, Matthew J.

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AU - Wolfe, Douglas Edward

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N2 - Thick polycrystalline gadolinium oxide (Gd 2O 3) films up to 11μm in thickness were deposited via reactive electron beam-physical vapor deposition (EB-PVD) on silicon (111) substrates for use in neutron radiation detection. The effects of coating thickness, substrate temperature, and oxygen flow on film structural, electrical and optical properties were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), capacitance-voltage (C-V) measurements, and ultraviolet-visible (UV-Vis) spectroscopy. Films were characterized as either monoclinic or mixed monoclinic and cubic phase depending on deposition parameters. Increasing the deposition temperature resulted in increased film crystallinity and cubic phase volume while decreasing the O 2 flow rate resulted in increased volume of the monoclinic phase. Evidence of a thickness dependent crystallography is also presented. Electrical property measurements showed thin film dielectric constant could be tailored between 12 and 20 at 1MHz frequency by decreasing the oxygen flow rate at deposition temperatures of 250°C which is attributed to an increased presence of the monoclinic phase and increased film density. Band gap values were calculated from transmission measurements and ranged between 5.44 and 5.96eV.

AB - Thick polycrystalline gadolinium oxide (Gd 2O 3) films up to 11μm in thickness were deposited via reactive electron beam-physical vapor deposition (EB-PVD) on silicon (111) substrates for use in neutron radiation detection. The effects of coating thickness, substrate temperature, and oxygen flow on film structural, electrical and optical properties were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), capacitance-voltage (C-V) measurements, and ultraviolet-visible (UV-Vis) spectroscopy. Films were characterized as either monoclinic or mixed monoclinic and cubic phase depending on deposition parameters. Increasing the deposition temperature resulted in increased film crystallinity and cubic phase volume while decreasing the O 2 flow rate resulted in increased volume of the monoclinic phase. Evidence of a thickness dependent crystallography is also presented. Electrical property measurements showed thin film dielectric constant could be tailored between 12 and 20 at 1MHz frequency by decreasing the oxygen flow rate at deposition temperatures of 250°C which is attributed to an increased presence of the monoclinic phase and increased film density. Band gap values were calculated from transmission measurements and ranged between 5.44 and 5.96eV.

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