Processing and characterization of GaSb/High-k dielectric interfaces

E. Hwang, C. Eaton, S. Mujumdar, H. Madan, A. Ali, D. Bhatia, S. Datta, J. Ruzyllo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The GaSb surface was exposed to various HCl-based chemical treatments in order to prepare it for high-k dielectric integration. The chemical and structural analysis was performed by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The chemical analysis indicates the HCl effectively removes native oxide from GaSb surface and leaves it slightly antimony rich. The structural study reveals that the surface roughness increases upon the reexposure to air after the HCl-based surface treatment. Additional information was obtained from photo-conductance decay (PCD) measurements as well as C-V measurements of metal-Al 2O 3-GaSb capacitors.

Original languageEnglish (US)
Title of host publicationSemiconductor Cleaning Science and Technology 12, SCST 12
Pages157-162
Number of pages6
Edition5
DOIs
StatePublished - Dec 1 2011
Event12th International Symposium on Semiconductor Cleaning Science and Technology, SCST12 - 220th ECS Meeting - Boston, MA, United States
Duration: Oct 10 2011Oct 11 2011

Publication series

NameECS Transactions
Number5
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other12th International Symposium on Semiconductor Cleaning Science and Technology, SCST12 - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period10/10/1110/11/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Hwang, E., Eaton, C., Mujumdar, S., Madan, H., Ali, A., Bhatia, D., Datta, S., & Ruzyllo, J. (2011). Processing and characterization of GaSb/High-k dielectric interfaces. In Semiconductor Cleaning Science and Technology 12, SCST 12 (5 ed., pp. 157-162). (ECS Transactions; Vol. 41, No. 5). https://doi.org/10.1149/1.3630839