Processing dependence of biaxial texture in yttria-stabilized zirconia by lon-beam-assisted deposition

M. P. Chudzik, R. Erck, M. T. Lanagan, C. R. Kannewurf

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Abstract

Biaxially textured yttria (8 mol%)-stabilized zirconia (YSZ) thin films were deposited on randomly oriented Hastelloy C and Stainless Steel 304 at room temperature as a buffer layer for subsequent deposition of oriented YBa2Cu3Ox films. The 0.16-1.3 (im thick YSZ films were deposited by ebeam evaporation at rates of 1.2-3.2 A/see. Biaxially textured films were produced with an Ar/O: ion beam directed at the substrate during film growth. X-ray diffraction was used to study in-plane and out-of-plane orientation as a function of ionbombardment angle, film thickness, ion-to-atom flux ratio, and substrate material. In-plane and out-of-plane averagemisorientation angles on these YSZ films that were deposited by ion-beam-assisted deposition were as low as 17 and 5.4°, respectively, on as-received substrates.

Original languageEnglish (US)
Pages (from-to)1490-1493
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Volume9
Issue number2 PART 2
DOIs
Publication statusPublished - Dec 1 1999

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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