Processing-induced electron traps in n-type GaN

F. D. Auret, S. A. Goodman, G. Myburg, Suzanne E. Mohney, J. M. De Lucca

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have used deep-level transient spectroscopy (DLTS) to investigate the electron trap defects introduced in n-GaN during the fabrication of Pt Schottky contacts by electro-deposition, electron beam deposition and sputter deposition under three different deposition conditions. The results indicate that electro-deposition is the only one of these processes that does not introduce any defects. Diodes fabricated by this technique also have the best rectification properties. Both electron beam deposition and sputter deposition introduce electron traps in concentrations that increase towards the Pt/GaN interface. However, sputter deposition at a lower power and higher pressure results in significantly reduced defect concentrations and improved rectification properties.

Original languageEnglish (US)
Pages (from-to)102-104
Number of pages3
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume82
Issue number1-3
DOIs
StatePublished - May 22 2001

Fingerprint

Electron traps
Sputter deposition
traps
Electrodeposition
Defects
Electron beams
Processing
Deep level transient spectroscopy
electrons
rectification
electrodeposition
defects
Diodes
electron beams
Fabrication
electric contacts
diodes
fabrication
spectroscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Auret, F. D. ; Goodman, S. A. ; Myburg, G. ; Mohney, Suzanne E. ; De Lucca, J. M. / Processing-induced electron traps in n-type GaN. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2001 ; Vol. 82, No. 1-3. pp. 102-104.
@article{215a987338294964b15a85303173e318,
title = "Processing-induced electron traps in n-type GaN",
abstract = "We have used deep-level transient spectroscopy (DLTS) to investigate the electron trap defects introduced in n-GaN during the fabrication of Pt Schottky contacts by electro-deposition, electron beam deposition and sputter deposition under three different deposition conditions. The results indicate that electro-deposition is the only one of these processes that does not introduce any defects. Diodes fabricated by this technique also have the best rectification properties. Both electron beam deposition and sputter deposition introduce electron traps in concentrations that increase towards the Pt/GaN interface. However, sputter deposition at a lower power and higher pressure results in significantly reduced defect concentrations and improved rectification properties.",
author = "Auret, {F. D.} and Goodman, {S. A.} and G. Myburg and Mohney, {Suzanne E.} and {De Lucca}, {J. M.}",
year = "2001",
month = "5",
day = "22",
doi = "10.1016/S0921-5107(00)00723-6",
language = "English (US)",
volume = "82",
pages = "102--104",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "1-3",

}

Processing-induced electron traps in n-type GaN. / Auret, F. D.; Goodman, S. A.; Myburg, G.; Mohney, Suzanne E.; De Lucca, J. M.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 82, No. 1-3, 22.05.2001, p. 102-104.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Processing-induced electron traps in n-type GaN

AU - Auret, F. D.

AU - Goodman, S. A.

AU - Myburg, G.

AU - Mohney, Suzanne E.

AU - De Lucca, J. M.

PY - 2001/5/22

Y1 - 2001/5/22

N2 - We have used deep-level transient spectroscopy (DLTS) to investigate the electron trap defects introduced in n-GaN during the fabrication of Pt Schottky contacts by electro-deposition, electron beam deposition and sputter deposition under three different deposition conditions. The results indicate that electro-deposition is the only one of these processes that does not introduce any defects. Diodes fabricated by this technique also have the best rectification properties. Both electron beam deposition and sputter deposition introduce electron traps in concentrations that increase towards the Pt/GaN interface. However, sputter deposition at a lower power and higher pressure results in significantly reduced defect concentrations and improved rectification properties.

AB - We have used deep-level transient spectroscopy (DLTS) to investigate the electron trap defects introduced in n-GaN during the fabrication of Pt Schottky contacts by electro-deposition, electron beam deposition and sputter deposition under three different deposition conditions. The results indicate that electro-deposition is the only one of these processes that does not introduce any defects. Diodes fabricated by this technique also have the best rectification properties. Both electron beam deposition and sputter deposition introduce electron traps in concentrations that increase towards the Pt/GaN interface. However, sputter deposition at a lower power and higher pressure results in significantly reduced defect concentrations and improved rectification properties.

UR - http://www.scopus.com/inward/record.url?scp=0035933164&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035933164&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(00)00723-6

DO - 10.1016/S0921-5107(00)00723-6

M3 - Article

VL - 82

SP - 102

EP - 104

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -