Processing of PZT piezoelectric thin films for microelectromechanical systems

Mary Hendrickson, Tao Su, Susan E. Trolier-McKinstry, Bernard J. Rod, Robert J. Zeto

Research output: Contribution to conferencePaper

11 Citations (Scopus)

Abstract

Piezoelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films for microelectromechanical systems (MEMS) were deposited on platinum coated silicon substrates by sol-gel processing using lead acetate trihydrate as the lead source. A thickness uniformity of better than 1% variation over 4 inches wafers was achieved. Auger depth profiling showed good compositional homogeneity through the film thickness, with some lead loss at the film surface. A PbO top layer on the top of PZT thin films gave improved properties. Grazing angle scanning XRD confirmed that the PbO top layer helped prevent the formation of a pyrochlore surface layer during crystallization. Work on reactive ion etching of the PZT thin films was also initiated. It was found that Cl2/CCl4 mixtures could be used to etch PZT with an etching rate of 100 to approximately 150 angstroms/min, and HCFC-124 with a rate of 320 angstroms/min.

Original languageEnglish (US)
Pages683-686
Number of pages4
StatePublished - Dec 1 1996
EventProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA
Duration: Aug 18 1996Aug 21 1996

Other

OtherProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
CityEast Brunswick, NJ, USA
Period8/18/968/21/96

Fingerprint

MEMS
1,1,1,2-tetrafluoro-2-chloroethane
Thin films
Processing
Lead
Depth profiling
Reactive ion etching
Silicon
Crystallization
Platinum
Sol-gels
Film thickness
Etching
Scanning
Substrates
pyrochlore
lead acetate

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Hendrickson, M., Su, T., Trolier-McKinstry, S. E., Rod, B. J., & Zeto, R. J. (1996). Processing of PZT piezoelectric thin films for microelectromechanical systems. 683-686. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .
Hendrickson, Mary ; Su, Tao ; Trolier-McKinstry, Susan E. ; Rod, Bernard J. ; Zeto, Robert J. / Processing of PZT piezoelectric thin films for microelectromechanical systems. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .4 p.
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Hendrickson, M, Su, T, Trolier-McKinstry, SE, Rod, BJ & Zeto, RJ 1996, 'Processing of PZT piezoelectric thin films for microelectromechanical systems' Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, 8/18/96 - 8/21/96, pp. 683-686.

Processing of PZT piezoelectric thin films for microelectromechanical systems. / Hendrickson, Mary; Su, Tao; Trolier-McKinstry, Susan E.; Rod, Bernard J.; Zeto, Robert J.

1996. 683-686 Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .

Research output: Contribution to conferencePaper

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Hendrickson M, Su T, Trolier-McKinstry SE, Rod BJ, Zeto RJ. Processing of PZT piezoelectric thin films for microelectromechanical systems. 1996. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .