Properties of MgB2 films grown at various temperatures by hybrid physical-chemical vapour deposition

Ke Chen, Menno Veldhorst, Che Hui Lee, Daniel R. Lamborn, Raymond Defrain, Joan Marie Redwing, Qi Li, X. X. Xi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A hybrid physical-chemical vapour deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB2 thin films and thick films at various temperatures. We are able to grow superconducting MgB2 thin films at temperatures as low as 350 °C with a Tc0 of 35.5K. MgB2 films up to 4νm in thickness grown at 550 °C have Jc over 106Acm -2 at 5K and zero applied field. The low deposition temperature of MgB2 films is desirable for all-MgB2 tunnel junctions and MgB2 thick films are important for applications in coated conductors.

Original languageEnglish (US)
Article number095015
JournalSuperconductor Science and Technology
Volume21
Issue number9
DOIs
StatePublished - Sep 1 2008

Fingerprint

Physical vapor deposition
Chemical vapor deposition
vapor deposition
heaters
Thick films
thick films
Superconducting films
Tunnel junctions
thin films
tunnel junctions
Temperature
temperature
conductors
Thin films
Substrates

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Chen, Ke ; Veldhorst, Menno ; Lee, Che Hui ; Lamborn, Daniel R. ; Defrain, Raymond ; Redwing, Joan Marie ; Li, Qi ; Xi, X. X. / Properties of MgB2 films grown at various temperatures by hybrid physical-chemical vapour deposition. In: Superconductor Science and Technology. 2008 ; Vol. 21, No. 9.
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Properties of MgB2 films grown at various temperatures by hybrid physical-chemical vapour deposition. / Chen, Ke; Veldhorst, Menno; Lee, Che Hui; Lamborn, Daniel R.; Defrain, Raymond; Redwing, Joan Marie; Li, Qi; Xi, X. X.

In: Superconductor Science and Technology, Vol. 21, No. 9, 095015, 01.09.2008.

Research output: Contribution to journalArticle

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