Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

S. Keller, C. S. Suh, Z. Chen, R. Chu, S. Rajan, N. A. Fichtenbaum, M. Furukawa, S. P. DenBaars, J. S. Speck, U. K. Mishra

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Abstract

Smooth N-polar GaN/ Alx Ga1-x N/GaN heterostructures with a different Al mole fraction were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates with a misorientation angle of 4° toward the a -sapphire plane. The sheet electron density of the two-dimensional electron gas (2DEG), which formed at the upper GaN/ Alx Ga1-x N interface increased with an increasing Al-mole fraction in the Alx Ga1-x N layer and increasing silicon modulation doping, similar to the observations for Ga-polar heterostructures. The transport properties of the 2DEG, however, were anisotropic. The growth on vicinal substrates led to the formation of well ordered multiatomic steps during Alx Ga1-x N growth and the sheet resistance of the 2DEG parallel to the steps was about 25% lower than the resistance measured in the perpendicular direction. The fabricated devices exhibited a drain-source current, IDS, of 0.9 A/mm at a gate-source voltage +1 V. At a drain-source voltage of 10 V and IDS =300 mA/mm, current-gain and maximum oscillation frequencies of 15 and 38 GHz, respectively, were measured.

Original languageEnglish (US)
Article number033708
JournalJournal of Applied Physics
Volume103
Issue number3
DOIs
StatePublished - Feb 22 2008

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metalorganic chemical vapor deposition
field effect transistors
sapphire
modulation doping
electric potential
misalignment
electron gas
transport properties
oscillations
silicon

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Keller, S. ; Suh, C. S. ; Chen, Z. ; Chu, R. ; Rajan, S. ; Fichtenbaum, N. A. ; Furukawa, M. ; DenBaars, S. P. ; Speck, J. S. ; Mishra, U. K. / Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition. In: Journal of Applied Physics. 2008 ; Vol. 103, No. 3.
@article{8a9715305180483ca252a52937bdc0cc,
title = "Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition",
abstract = "Smooth N-polar GaN/ Alx Ga1-x N/GaN heterostructures with a different Al mole fraction were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates with a misorientation angle of 4° toward the a -sapphire plane. The sheet electron density of the two-dimensional electron gas (2DEG), which formed at the upper GaN/ Alx Ga1-x N interface increased with an increasing Al-mole fraction in the Alx Ga1-x N layer and increasing silicon modulation doping, similar to the observations for Ga-polar heterostructures. The transport properties of the 2DEG, however, were anisotropic. The growth on vicinal substrates led to the formation of well ordered multiatomic steps during Alx Ga1-x N growth and the sheet resistance of the 2DEG parallel to the steps was about 25{\%} lower than the resistance measured in the perpendicular direction. The fabricated devices exhibited a drain-source current, IDS, of 0.9 A/mm at a gate-source voltage +1 V. At a drain-source voltage of 10 V and IDS =300 mA/mm, current-gain and maximum oscillation frequencies of 15 and 38 GHz, respectively, were measured.",
author = "S. Keller and Suh, {C. S.} and Z. Chen and R. Chu and S. Rajan and Fichtenbaum, {N. A.} and M. Furukawa and DenBaars, {S. P.} and Speck, {J. S.} and Mishra, {U. K.}",
year = "2008",
month = "2",
day = "22",
doi = "10.1063/1.2838214",
language = "English (US)",
volume = "103",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

Keller, S, Suh, CS, Chen, Z, Chu, R, Rajan, S, Fichtenbaum, NA, Furukawa, M, DenBaars, SP, Speck, JS & Mishra, UK 2008, 'Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition', Journal of Applied Physics, vol. 103, no. 3, 033708. https://doi.org/10.1063/1.2838214

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition. / Keller, S.; Suh, C. S.; Chen, Z.; Chu, R.; Rajan, S.; Fichtenbaum, N. A.; Furukawa, M.; DenBaars, S. P.; Speck, J. S.; Mishra, U. K.

In: Journal of Applied Physics, Vol. 103, No. 3, 033708, 22.02.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

AU - Keller, S.

AU - Suh, C. S.

AU - Chen, Z.

AU - Chu, R.

AU - Rajan, S.

AU - Fichtenbaum, N. A.

AU - Furukawa, M.

AU - DenBaars, S. P.

AU - Speck, J. S.

AU - Mishra, U. K.

PY - 2008/2/22

Y1 - 2008/2/22

N2 - Smooth N-polar GaN/ Alx Ga1-x N/GaN heterostructures with a different Al mole fraction were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates with a misorientation angle of 4° toward the a -sapphire plane. The sheet electron density of the two-dimensional electron gas (2DEG), which formed at the upper GaN/ Alx Ga1-x N interface increased with an increasing Al-mole fraction in the Alx Ga1-x N layer and increasing silicon modulation doping, similar to the observations for Ga-polar heterostructures. The transport properties of the 2DEG, however, were anisotropic. The growth on vicinal substrates led to the formation of well ordered multiatomic steps during Alx Ga1-x N growth and the sheet resistance of the 2DEG parallel to the steps was about 25% lower than the resistance measured in the perpendicular direction. The fabricated devices exhibited a drain-source current, IDS, of 0.9 A/mm at a gate-source voltage +1 V. At a drain-source voltage of 10 V and IDS =300 mA/mm, current-gain and maximum oscillation frequencies of 15 and 38 GHz, respectively, were measured.

AB - Smooth N-polar GaN/ Alx Ga1-x N/GaN heterostructures with a different Al mole fraction were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates with a misorientation angle of 4° toward the a -sapphire plane. The sheet electron density of the two-dimensional electron gas (2DEG), which formed at the upper GaN/ Alx Ga1-x N interface increased with an increasing Al-mole fraction in the Alx Ga1-x N layer and increasing silicon modulation doping, similar to the observations for Ga-polar heterostructures. The transport properties of the 2DEG, however, were anisotropic. The growth on vicinal substrates led to the formation of well ordered multiatomic steps during Alx Ga1-x N growth and the sheet resistance of the 2DEG parallel to the steps was about 25% lower than the resistance measured in the perpendicular direction. The fabricated devices exhibited a drain-source current, IDS, of 0.9 A/mm at a gate-source voltage +1 V. At a drain-source voltage of 10 V and IDS =300 mA/mm, current-gain and maximum oscillation frequencies of 15 and 38 GHz, respectively, were measured.

UR - http://www.scopus.com/inward/record.url?scp=39349105441&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39349105441&partnerID=8YFLogxK

U2 - 10.1063/1.2838214

DO - 10.1063/1.2838214

M3 - Article

AN - SCOPUS:39349105441

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 033708

ER -