Properties of PZT thin films as a function of in-plane biaxial stress

J. F. Shepard, Susan E. Trolier-McKinstry, Mary A. Hendrickson, Robert Zeto

Research output: Contribution to conferencePaper

25 Scopus citations

Abstract

The properties of lead zirconate titanate (PZT) thin films were characterized as a function of in-plane biaxial stress. Typical values of Pr and Ec for unstressed (i.e. no applied load) sol-gel films were measured using Pt/PZT/Pt/Ti/SiO2/Si test capacitors and are on the order of 28 μC/cm2 and 63 kV/cm, respectively. Residual stresses in PZT/electrode stacks were found to be a function of the annealing condition for the Pt/Ti bottom electrode. Measured values of Pt/Ti stress for sputtered films consisting of 150 nm Pt and 20 nm Ti varied with temperature from -386 MPa in the as-received state to 718 MPa after heating to 700 °C. Experimental stress states (of test capacitors) were modified from the fabricated condition in a biaxial stress rig designed to provide a uniform tensile or compressive load over the surface of a 3 inches substrate. The resulting applied stress state in the films ranged from -142 MPa to 212 MPa. Remnant polarization, coercive field strengths, capacitance, and tan δ were then measured in situ and correlated to the state of stress in the PZT film.

Original languageEnglish (US)
Pages161-165
Number of pages5
StatePublished - Dec 1 1996
EventProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA
Duration: Aug 18 1996Aug 21 1996

Other

OtherProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
CityEast Brunswick, NJ, USA
Period8/18/968/21/96

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Shepard, J. F., Trolier-McKinstry, S. E., Hendrickson, M. A., & Zeto, R. (1996). Properties of PZT thin films as a function of in-plane biaxial stress. 161-165. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .