Abstract
The behavior of Si donors was studied in AlxGa1-xN films with composition 0 < x < 0.6. It is shown that the Si donors ionization energy increases from 18 meV for 0 < x < 0.1 to about 50 meV for x = 0.4 and does not exceed 90 meV for x = 0.6. Increase in Al composition is also accompanied by the growth of the density of defects with energy levels deeper than Si. Combined action of the two above effects leads to increased difficulty in n-type doping of AlGaN films with higher Al mole fractions. Persistent photoconductivity (PPC) is shown to be a characteristic feature of AlGaN samples of all compositions. It is shown that PPC in AlGaN is related to the presence of centers with a relatively high (0.1-0.2 eV) barrier for capture of electrons. In GaN and AlGaN with x < 0.1 such centers are not associated with Si donors per se.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 627-635 |
| Number of pages | 9 |
| Journal | Solid-State Electronics |
| Volume | 42 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 6 1998 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Properties of Si donors and persistent photoconductivity in AlGaN. / Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Mil'vidskii, M. G.; Redwing, Joan Marie; Shin, M.; Skowronski, M.; Greve, D. W.; Wilson, R. G.
In: Solid-State Electronics, Vol. 42, No. 4, 06.04.1998, p. 627-635.Research output: Contribution to journal › Article
TY - JOUR
T1 - Properties of Si donors and persistent photoconductivity in AlGaN
AU - Polyakov, A. Y.
AU - Smirnov, N. B.
AU - Govorkov, A. V.
AU - Mil'vidskii, M. G.
AU - Redwing, Joan Marie
AU - Shin, M.
AU - Skowronski, M.
AU - Greve, D. W.
AU - Wilson, R. G.
PY - 1998/4/6
Y1 - 1998/4/6
N2 - The behavior of Si donors was studied in AlxGa1-xN films with composition 0 < x < 0.6. It is shown that the Si donors ionization energy increases from 18 meV for 0 < x < 0.1 to about 50 meV for x = 0.4 and does not exceed 90 meV for x = 0.6. Increase in Al composition is also accompanied by the growth of the density of defects with energy levels deeper than Si. Combined action of the two above effects leads to increased difficulty in n-type doping of AlGaN films with higher Al mole fractions. Persistent photoconductivity (PPC) is shown to be a characteristic feature of AlGaN samples of all compositions. It is shown that PPC in AlGaN is related to the presence of centers with a relatively high (0.1-0.2 eV) barrier for capture of electrons. In GaN and AlGaN with x < 0.1 such centers are not associated with Si donors per se.
AB - The behavior of Si donors was studied in AlxGa1-xN films with composition 0 < x < 0.6. It is shown that the Si donors ionization energy increases from 18 meV for 0 < x < 0.1 to about 50 meV for x = 0.4 and does not exceed 90 meV for x = 0.6. Increase in Al composition is also accompanied by the growth of the density of defects with energy levels deeper than Si. Combined action of the two above effects leads to increased difficulty in n-type doping of AlGaN films with higher Al mole fractions. Persistent photoconductivity (PPC) is shown to be a characteristic feature of AlGaN samples of all compositions. It is shown that PPC in AlGaN is related to the presence of centers with a relatively high (0.1-0.2 eV) barrier for capture of electrons. In GaN and AlGaN with x < 0.1 such centers are not associated with Si donors per se.
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U2 - 10.1016/S0038-1101(97)00277-3
DO - 10.1016/S0038-1101(97)00277-3
M3 - Article
AN - SCOPUS:0032045119
VL - 42
SP - 627
EP - 635
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 4
ER -