Properties of Si donors and persistent photoconductivity in AlGaN

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; M. G. Mil'vidskii; J. M. Redwing; M. Shin; M. Skowronski; D. W. Greve; R. G. Wilson

doi:10.1016/S0038-1101(97)00277-3

Properties of Si donors and persistent photoconductivity in AlGaN

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, M. G. Mil'vidskii, J. M. Redwing, M. Shin, M. Skowronski, D. W. Greve, R. G. Wilson

Research output: Contribution to journal › Article

88 Scopus citations

Abstract

The behavior of Si donors was studied in Al_xGa_1-xN films with composition 0 < x < 0.6. It is shown that the Si donors ionization energy increases from 18 meV for 0 < x < 0.1 to about 50 meV for x = 0.4 and does not exceed 90 meV for x = 0.6. Increase in Al composition is also accompanied by the growth of the density of defects with energy levels deeper than Si. Combined action of the two above effects leads to increased difficulty in n-type doping of AlGaN films with higher Al mole fractions. Persistent photoconductivity (PPC) is shown to be a characteristic feature of AlGaN samples of all compositions. It is shown that PPC in AlGaN is related to the presence of centers with a relatively high (0.1-0.2 eV) barrier for capture of electrons. In GaN and AlGaN with x < 0.1 such centers are not associated with Si donors per se.

Original language	English (US)
Pages (from-to)	627-635
Number of pages	9
Journal	Solid-State Electronics
Volume	42
Issue number	4
DOIs	https://doi.org/10.1016/S0038-1101(97)00277-3
State	Published - Apr 6 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Mil'vidskii, M. G., Redwing, J. M., Shin, M., Skowronski, M., Greve, D. W., & Wilson, R. G. (1998). Properties of Si donors and persistent photoconductivity in AlGaN. Solid-State Electronics, 42(4), 627-635. https://doi.org/10.1016/S0038-1101(97)00277-3

@article{d6bdd942219148228f3779d57c1cfe57,

title = "Properties of Si donors and persistent photoconductivity in AlGaN",

abstract = "The behavior of Si donors was studied in AlxGa1-xN films with composition 0 < x < 0.6. It is shown that the Si donors ionization energy increases from 18 meV for 0 < x < 0.1 to about 50 meV for x = 0.4 and does not exceed 90 meV for x = 0.6. Increase in Al composition is also accompanied by the growth of the density of defects with energy levels deeper than Si. Combined action of the two above effects leads to increased difficulty in n-type doping of AlGaN films with higher Al mole fractions. Persistent photoconductivity (PPC) is shown to be a characteristic feature of AlGaN samples of all compositions. It is shown that PPC in AlGaN is related to the presence of centers with a relatively high (0.1-0.2 eV) barrier for capture of electrons. In GaN and AlGaN with x < 0.1 such centers are not associated with Si donors per se.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Mil'vidskii, {M. G.} and Redwing, {J. M.} and M. Shin and M. Skowronski and Greve, {D. W.} and Wilson, {R. G.}",

year = "1998",

month = apr,

day = "6",

doi = "10.1016/S0038-1101(97)00277-3",

language = "English (US)",

volume = "42",

pages = "627--635",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "4",

}

TY - JOUR

T1 - Properties of Si donors and persistent photoconductivity in AlGaN

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Mil'vidskii, M. G.

AU - Redwing, J. M.

AU - Shin, M.

AU - Skowronski, M.

AU - Greve, D. W.

AU - Wilson, R. G.

PY - 1998/4/6

Y1 - 1998/4/6

N2 - The behavior of Si donors was studied in AlxGa1-xN films with composition 0 < x < 0.6. It is shown that the Si donors ionization energy increases from 18 meV for 0 < x < 0.1 to about 50 meV for x = 0.4 and does not exceed 90 meV for x = 0.6. Increase in Al composition is also accompanied by the growth of the density of defects with energy levels deeper than Si. Combined action of the two above effects leads to increased difficulty in n-type doping of AlGaN films with higher Al mole fractions. Persistent photoconductivity (PPC) is shown to be a characteristic feature of AlGaN samples of all compositions. It is shown that PPC in AlGaN is related to the presence of centers with a relatively high (0.1-0.2 eV) barrier for capture of electrons. In GaN and AlGaN with x < 0.1 such centers are not associated with Si donors per se.

AB - The behavior of Si donors was studied in AlxGa1-xN films with composition 0 < x < 0.6. It is shown that the Si donors ionization energy increases from 18 meV for 0 < x < 0.1 to about 50 meV for x = 0.4 and does not exceed 90 meV for x = 0.6. Increase in Al composition is also accompanied by the growth of the density of defects with energy levels deeper than Si. Combined action of the two above effects leads to increased difficulty in n-type doping of AlGaN films with higher Al mole fractions. Persistent photoconductivity (PPC) is shown to be a characteristic feature of AlGaN samples of all compositions. It is shown that PPC in AlGaN is related to the presence of centers with a relatively high (0.1-0.2 eV) barrier for capture of electrons. In GaN and AlGaN with x < 0.1 such centers are not associated with Si donors per se.

UR - http://www.scopus.com/inward/record.url?scp=0032045119&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032045119&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(97)00277-3

DO - 10.1016/S0038-1101(97)00277-3

M3 - Article

AN - SCOPUS:0032045119

VL - 42

SP - 627

EP - 635

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 4

ER -