Properties of Si donors and persistent photoconductivity in AlGaN

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, M. G. Mil'vidskii, Joan Marie Redwing, M. Shin, M. Skowronski, D. W. Greve, R. G. Wilson

Research output: Contribution to journalArticle

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Abstract

The behavior of Si donors was studied in AlxGa1-xN films with composition 0 < x < 0.6. It is shown that the Si donors ionization energy increases from 18 meV for 0 < x < 0.1 to about 50 meV for x = 0.4 and does not exceed 90 meV for x = 0.6. Increase in Al composition is also accompanied by the growth of the density of defects with energy levels deeper than Si. Combined action of the two above effects leads to increased difficulty in n-type doping of AlGaN films with higher Al mole fractions. Persistent photoconductivity (PPC) is shown to be a characteristic feature of AlGaN samples of all compositions. It is shown that PPC in AlGaN is related to the presence of centers with a relatively high (0.1-0.2 eV) barrier for capture of electrons. In GaN and AlGaN with x < 0.1 such centers are not associated with Si donors per se.

Original languageEnglish (US)
Pages (from-to)627-635
Number of pages9
JournalSolid-State Electronics
Volume42
Issue number4
DOIs
StatePublished - Apr 6 1998

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Photoconductivity
photoconductivity
Chemical analysis
Ionization potential
Electron energy levels
energy levels
Doping (additives)
ionization
Defects
Electrons
defects
aluminum gallium nitride
electrons
energy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Mil'vidskii, M. G., Redwing, J. M., Shin, M., ... Wilson, R. G. (1998). Properties of Si donors and persistent photoconductivity in AlGaN. Solid-State Electronics, 42(4), 627-635. https://doi.org/10.1016/S0038-1101(97)00277-3
Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Mil'vidskii, M. G. ; Redwing, Joan Marie ; Shin, M. ; Skowronski, M. ; Greve, D. W. ; Wilson, R. G. / Properties of Si donors and persistent photoconductivity in AlGaN. In: Solid-State Electronics. 1998 ; Vol. 42, No. 4. pp. 627-635.
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Polyakov, AY, Smirnov, NB, Govorkov, AV, Mil'vidskii, MG, Redwing, JM, Shin, M, Skowronski, M, Greve, DW & Wilson, RG 1998, 'Properties of Si donors and persistent photoconductivity in AlGaN', Solid-State Electronics, vol. 42, no. 4, pp. 627-635. https://doi.org/10.1016/S0038-1101(97)00277-3

Properties of Si donors and persistent photoconductivity in AlGaN. / Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Mil'vidskii, M. G.; Redwing, Joan Marie; Shin, M.; Skowronski, M.; Greve, D. W.; Wilson, R. G.

In: Solid-State Electronics, Vol. 42, No. 4, 06.04.1998, p. 627-635.

Research output: Contribution to journalArticle

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AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Mil'vidskii, M. G.

AU - Redwing, Joan Marie

AU - Shin, M.

AU - Skowronski, M.

AU - Greve, D. W.

AU - Wilson, R. G.

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Polyakov AY, Smirnov NB, Govorkov AV, Mil'vidskii MG, Redwing JM, Shin M et al. Properties of Si donors and persistent photoconductivity in AlGaN. Solid-State Electronics. 1998 Apr 6;42(4):627-635. https://doi.org/10.1016/S0038-1101(97)00277-3