Properties of Zr-substituted (Ba, Sr)TiO3 thin films for integrated capacitors

G. T. Stauf, P. S. Chen, W. Paw, J. F. Roeder, T. Ayguavives, Jon-Paul Maria, A. I. Kingon

Research output: Contribution to journalConference articlepeer-review

Abstract

There has been significant interest recently in use of BaSrTiO3 (BST) thin films for integrated capacitors; these devices have benefits for high frequency operations, particularly when high levels of charge or energy storage are required. We discuss the electrical properties of BST thin films grown by metalorganic chemical vapor deposition (MOCVD) which make them suitable for these applications, as well as the impact of processing conditions such as growth temperature on specific film properties. We have also examined addition of Zr in amounts ranging up to 20% to the BST films. X-Ray diffraction indicates that the Zr is incorporated into the BST lattice. Voltage withstanding capability, leakage and dielectric constant of the thin films have been measured as functions of deposition temperature and Zr content. Addition of Zr to BST films increases breakdown voltages by as much as a factor of two, to approximately 2 MV/cm, raising their energy storage density values to levels approaching 30 J/cc. Charge storage densities of above 60 fF/μm2 were also obtained.

Original languageEnglish (US)
Pages (from-to)131-136
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume603
StatePublished - Dec 11 2000
EventMaterials issues for Tunable RF and Microwave Devices - Boston, MA, USA
Duration: Nov 30 1999Dec 2 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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