Properties of Zr-substituted (Ba, Sr)TiO3 thin films for integrated capacitors

G. T. Stauf, P. S. Chen, W. Paw, J. F. Roeder, T. Ayguavives, Jon-Paul Maria, A. I. Kingon

Research output: Contribution to journalConference article

Abstract

There has been significant interest recently in use of BaSrTiO3 (BST) thin films for integrated capacitors; these devices have benefits for high frequency operations, particularly when high levels of charge or energy storage are required. We discuss the electrical properties of BST thin films grown by metalorganic chemical vapor deposition (MOCVD) which make them suitable for these applications, as well as the impact of processing conditions such as growth temperature on specific film properties. We have also examined addition of Zr in amounts ranging up to 20% to the BST films. X-Ray diffraction indicates that the Zr is incorporated into the BST lattice. Voltage withstanding capability, leakage and dielectric constant of the thin films have been measured as functions of deposition temperature and Zr content. Addition of Zr to BST films increases breakdown voltages by as much as a factor of two, to approximately 2 MV/cm, raising their energy storage density values to levels approaching 30 J/cc. Charge storage densities of above 60 fF/μm2 were also obtained.

Original languageEnglish (US)
Pages (from-to)131-136
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume603
StatePublished - Dec 11 2000
EventMaterials issues for Tunable RF and Microwave Devices - Boston, MA, USA
Duration: Nov 30 1999Dec 2 1999

Fingerprint

capacitors
Capacitors
energy storage
Thin films
Energy storage
thin films
Metallorganic chemical vapor deposition
Growth temperature
Electric breakdown
electrical faults
metalorganic chemical vapor deposition
Electric properties
leakage
Permittivity
electrical properties
permittivity
X ray diffraction
temperature
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Stauf, G. T., Chen, P. S., Paw, W., Roeder, J. F., Ayguavives, T., Maria, J-P., & Kingon, A. I. (2000). Properties of Zr-substituted (Ba, Sr)TiO3 thin films for integrated capacitors. Materials Research Society Symposium - Proceedings, 603, 131-136.
Stauf, G. T. ; Chen, P. S. ; Paw, W. ; Roeder, J. F. ; Ayguavives, T. ; Maria, Jon-Paul ; Kingon, A. I. / Properties of Zr-substituted (Ba, Sr)TiO3 thin films for integrated capacitors. In: Materials Research Society Symposium - Proceedings. 2000 ; Vol. 603. pp. 131-136.
@article{6a27feedfbea499ab12efd26be75e46d,
title = "Properties of Zr-substituted (Ba, Sr)TiO3 thin films for integrated capacitors",
abstract = "There has been significant interest recently in use of BaSrTiO3 (BST) thin films for integrated capacitors; these devices have benefits for high frequency operations, particularly when high levels of charge or energy storage are required. We discuss the electrical properties of BST thin films grown by metalorganic chemical vapor deposition (MOCVD) which make them suitable for these applications, as well as the impact of processing conditions such as growth temperature on specific film properties. We have also examined addition of Zr in amounts ranging up to 20{\%} to the BST films. X-Ray diffraction indicates that the Zr is incorporated into the BST lattice. Voltage withstanding capability, leakage and dielectric constant of the thin films have been measured as functions of deposition temperature and Zr content. Addition of Zr to BST films increases breakdown voltages by as much as a factor of two, to approximately 2 MV/cm, raising their energy storage density values to levels approaching 30 J/cc. Charge storage densities of above 60 fF/μm2 were also obtained.",
author = "Stauf, {G. T.} and Chen, {P. S.} and W. Paw and Roeder, {J. F.} and T. Ayguavives and Jon-Paul Maria and Kingon, {A. I.}",
year = "2000",
month = "12",
day = "11",
language = "English (US)",
volume = "603",
pages = "131--136",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Stauf, GT, Chen, PS, Paw, W, Roeder, JF, Ayguavives, T, Maria, J-P & Kingon, AI 2000, 'Properties of Zr-substituted (Ba, Sr)TiO3 thin films for integrated capacitors', Materials Research Society Symposium - Proceedings, vol. 603, pp. 131-136.

Properties of Zr-substituted (Ba, Sr)TiO3 thin films for integrated capacitors. / Stauf, G. T.; Chen, P. S.; Paw, W.; Roeder, J. F.; Ayguavives, T.; Maria, Jon-Paul; Kingon, A. I.

In: Materials Research Society Symposium - Proceedings, Vol. 603, 11.12.2000, p. 131-136.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Properties of Zr-substituted (Ba, Sr)TiO3 thin films for integrated capacitors

AU - Stauf, G. T.

AU - Chen, P. S.

AU - Paw, W.

AU - Roeder, J. F.

AU - Ayguavives, T.

AU - Maria, Jon-Paul

AU - Kingon, A. I.

PY - 2000/12/11

Y1 - 2000/12/11

N2 - There has been significant interest recently in use of BaSrTiO3 (BST) thin films for integrated capacitors; these devices have benefits for high frequency operations, particularly when high levels of charge or energy storage are required. We discuss the electrical properties of BST thin films grown by metalorganic chemical vapor deposition (MOCVD) which make them suitable for these applications, as well as the impact of processing conditions such as growth temperature on specific film properties. We have also examined addition of Zr in amounts ranging up to 20% to the BST films. X-Ray diffraction indicates that the Zr is incorporated into the BST lattice. Voltage withstanding capability, leakage and dielectric constant of the thin films have been measured as functions of deposition temperature and Zr content. Addition of Zr to BST films increases breakdown voltages by as much as a factor of two, to approximately 2 MV/cm, raising their energy storage density values to levels approaching 30 J/cc. Charge storage densities of above 60 fF/μm2 were also obtained.

AB - There has been significant interest recently in use of BaSrTiO3 (BST) thin films for integrated capacitors; these devices have benefits for high frequency operations, particularly when high levels of charge or energy storage are required. We discuss the electrical properties of BST thin films grown by metalorganic chemical vapor deposition (MOCVD) which make them suitable for these applications, as well as the impact of processing conditions such as growth temperature on specific film properties. We have also examined addition of Zr in amounts ranging up to 20% to the BST films. X-Ray diffraction indicates that the Zr is incorporated into the BST lattice. Voltage withstanding capability, leakage and dielectric constant of the thin films have been measured as functions of deposition temperature and Zr content. Addition of Zr to BST films increases breakdown voltages by as much as a factor of two, to approximately 2 MV/cm, raising their energy storage density values to levels approaching 30 J/cc. Charge storage densities of above 60 fF/μm2 were also obtained.

UR - http://www.scopus.com/inward/record.url?scp=0033708925&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033708925&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033708925

VL - 603

SP - 131

EP - 136

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -