Prospects for proximity effect superconducting fets

A. W. Kleinsasser, Thomas Nelson Jackson

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Proximity effect superconducting field effect transistors were first proposed over a decade ago, and promising initial experimental results have been obtained recently. In this paper we address the questions of how such a device works and whether or not a useful device is feasible, issues which have been virtually ignored. We discuss the circuit implications of zero on-state resistance in a device in which the input and output voltage scales are incompatible, at least with conventional superconductors. We examine the prospects for achieving voltage gain greater than unity by using high temperature superconductors as source and drain contacts. We also discuss the constraints placed on device dimensions, operating temperature, and semiconductor materials by the natural length scale for the penetration of superconductivity into normal materials.

Original languageEnglish (US)
Pages (from-to)1274-1277
Number of pages4
JournalIEEE Transactions on Magnetics
Volume25
Issue number2
DOIs
StatePublished - Jan 1 1989

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High temperature superconductors
Electric potential
Field effect transistors
Superconductivity
Superconducting materials
Semiconductor materials
Networks (circuits)
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{1fd20f0be1c34b0bb618593ec9680118,
title = "Prospects for proximity effect superconducting fets",
abstract = "Proximity effect superconducting field effect transistors were first proposed over a decade ago, and promising initial experimental results have been obtained recently. In this paper we address the questions of how such a device works and whether or not a useful device is feasible, issues which have been virtually ignored. We discuss the circuit implications of zero on-state resistance in a device in which the input and output voltage scales are incompatible, at least with conventional superconductors. We examine the prospects for achieving voltage gain greater than unity by using high temperature superconductors as source and drain contacts. We also discuss the constraints placed on device dimensions, operating temperature, and semiconductor materials by the natural length scale for the penetration of superconductivity into normal materials.",
author = "Kleinsasser, {A. W.} and Jackson, {Thomas Nelson}",
year = "1989",
month = "1",
day = "1",
doi = "10.1109/20.92528",
language = "English (US)",
volume = "25",
pages = "1274--1277",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

Prospects for proximity effect superconducting fets. / Kleinsasser, A. W.; Jackson, Thomas Nelson.

In: IEEE Transactions on Magnetics, Vol. 25, No. 2, 01.01.1989, p. 1274-1277.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Prospects for proximity effect superconducting fets

AU - Kleinsasser, A. W.

AU - Jackson, Thomas Nelson

PY - 1989/1/1

Y1 - 1989/1/1

N2 - Proximity effect superconducting field effect transistors were first proposed over a decade ago, and promising initial experimental results have been obtained recently. In this paper we address the questions of how such a device works and whether or not a useful device is feasible, issues which have been virtually ignored. We discuss the circuit implications of zero on-state resistance in a device in which the input and output voltage scales are incompatible, at least with conventional superconductors. We examine the prospects for achieving voltage gain greater than unity by using high temperature superconductors as source and drain contacts. We also discuss the constraints placed on device dimensions, operating temperature, and semiconductor materials by the natural length scale for the penetration of superconductivity into normal materials.

AB - Proximity effect superconducting field effect transistors were first proposed over a decade ago, and promising initial experimental results have been obtained recently. In this paper we address the questions of how such a device works and whether or not a useful device is feasible, issues which have been virtually ignored. We discuss the circuit implications of zero on-state resistance in a device in which the input and output voltage scales are incompatible, at least with conventional superconductors. We examine the prospects for achieving voltage gain greater than unity by using high temperature superconductors as source and drain contacts. We also discuss the constraints placed on device dimensions, operating temperature, and semiconductor materials by the natural length scale for the penetration of superconductivity into normal materials.

UR - http://www.scopus.com/inward/record.url?scp=0024627192&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024627192&partnerID=8YFLogxK

U2 - 10.1109/20.92528

DO - 10.1109/20.92528

M3 - Article

AN - SCOPUS:0024627192

VL - 25

SP - 1274

EP - 1277

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 2

ER -