Prospects of direct growth boron nitride films as substrates for graphene electronics

Michael S. Bresnehan, Matthew J. Hollander, Maxwell Wetherington, Ke Wang, Takahira Miyagi, Gregory Pastir, David W. Snyder, Jamie J. Gengler, Andrey A. Voevodin, William C. Mitchel, Joshua Alexander Robinson

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We present a route for direct growth of boron nitride via a polyborazylene to h-BN conversion process. This two-step growth process ultimately leads to a >25x reduction in the root-mean-square surface roughness of h-BN films when compared to a high temperature growth on Al2O3(0001) and Si(111) substrates. Additionally, the stoichiometry is shown to be highly dependent on the initial polyborazylene deposition temperature. Importantly, chemical vapor deposition (CVD) graphene transferred to direct-grown boron nitride films on Al2O3 at 400 °C results in a >1.5x and >2.5x improvement in mobility compared to CVD graphene transferred to Al2O3 and SiO2 substrates, respectively, which is attributed to the combined reduction of remote charged impurity scattering and surface roughness scattering. Simulation of mobility versus carrier concentration confirms the importance of limiting the introduction of charged impurities in the h-BN film and highlights the importance of these results in producing optimized h-BN substrates for high performance graphene and TMD devices.

Original languageEnglish (US)
Pages (from-to)459-471
Number of pages13
JournalJournal of Materials Research
Volume29
Issue number3
DOIs
StatePublished - Feb 14 2014

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Graphite
Boron nitride
boron nitrides
Graphene
graphene
Electronic equipment
Chemical vapor deposition
surface roughness
Substrates
Surface roughness
electronics
vapor deposition
Scattering
Impurities
impurities
Growth temperature
carrier mobility
scattering
Stoichiometry
Carrier concentration

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Bresnehan, Michael S. ; Hollander, Matthew J. ; Wetherington, Maxwell ; Wang, Ke ; Miyagi, Takahira ; Pastir, Gregory ; Snyder, David W. ; Gengler, Jamie J. ; Voevodin, Andrey A. ; Mitchel, William C. ; Robinson, Joshua Alexander. / Prospects of direct growth boron nitride films as substrates for graphene electronics. In: Journal of Materials Research. 2014 ; Vol. 29, No. 3. pp. 459-471.
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Bresnehan, MS, Hollander, MJ, Wetherington, M, Wang, K, Miyagi, T, Pastir, G, Snyder, DW, Gengler, JJ, Voevodin, AA, Mitchel, WC & Robinson, JA 2014, 'Prospects of direct growth boron nitride films as substrates for graphene electronics', Journal of Materials Research, vol. 29, no. 3, pp. 459-471. https://doi.org/10.1557/jmr.2013.323

Prospects of direct growth boron nitride films as substrates for graphene electronics. / Bresnehan, Michael S.; Hollander, Matthew J.; Wetherington, Maxwell; Wang, Ke; Miyagi, Takahira; Pastir, Gregory; Snyder, David W.; Gengler, Jamie J.; Voevodin, Andrey A.; Mitchel, William C.; Robinson, Joshua Alexander.

In: Journal of Materials Research, Vol. 29, No. 3, 14.02.2014, p. 459-471.

Research output: Contribution to journalArticle

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AU - Bresnehan, Michael S.

AU - Hollander, Matthew J.

AU - Wetherington, Maxwell

AU - Wang, Ke

AU - Miyagi, Takahira

AU - Pastir, Gregory

AU - Snyder, David W.

AU - Gengler, Jamie J.

AU - Voevodin, Andrey A.

AU - Mitchel, William C.

AU - Robinson, Joshua Alexander

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N2 - We present a route for direct growth of boron nitride via a polyborazylene to h-BN conversion process. This two-step growth process ultimately leads to a >25x reduction in the root-mean-square surface roughness of h-BN films when compared to a high temperature growth on Al2O3(0001) and Si(111) substrates. Additionally, the stoichiometry is shown to be highly dependent on the initial polyborazylene deposition temperature. Importantly, chemical vapor deposition (CVD) graphene transferred to direct-grown boron nitride films on Al2O3 at 400 °C results in a >1.5x and >2.5x improvement in mobility compared to CVD graphene transferred to Al2O3 and SiO2 substrates, respectively, which is attributed to the combined reduction of remote charged impurity scattering and surface roughness scattering. Simulation of mobility versus carrier concentration confirms the importance of limiting the introduction of charged impurities in the h-BN film and highlights the importance of these results in producing optimized h-BN substrates for high performance graphene and TMD devices.

AB - We present a route for direct growth of boron nitride via a polyborazylene to h-BN conversion process. This two-step growth process ultimately leads to a >25x reduction in the root-mean-square surface roughness of h-BN films when compared to a high temperature growth on Al2O3(0001) and Si(111) substrates. Additionally, the stoichiometry is shown to be highly dependent on the initial polyborazylene deposition temperature. Importantly, chemical vapor deposition (CVD) graphene transferred to direct-grown boron nitride films on Al2O3 at 400 °C results in a >1.5x and >2.5x improvement in mobility compared to CVD graphene transferred to Al2O3 and SiO2 substrates, respectively, which is attributed to the combined reduction of remote charged impurity scattering and surface roughness scattering. Simulation of mobility versus carrier concentration confirms the importance of limiting the introduction of charged impurities in the h-BN film and highlights the importance of these results in producing optimized h-BN substrates for high performance graphene and TMD devices.

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