Abstract
35 Bi(Mg1/2Ti1/2)O3-65 PbTiO3 (35 BiMT-65 PT) thin films with varying levels of A-site deficiency were investigated as a potential candidate for high-temperature nonvolatile ferroelectric memories. PbTiO3 seed layers utilized to nucleate the perovskite phase in A-site deficient films induced a thickness dependence to the ferroelectric hysteresis and dielectric permittivity. Adjusting for this, the dielectric response of the 35 BiMT-65 PT films is ≈ 960. The maximum dielectric permittivity was 430 °C at 1 MHz for A-site deficient films. The transition temperature is independent of film thickness to 85 nm. Tan(δ) remains less than 15% at 1 MHz regardless of film thickness and temperature up to 585 °C. High-temperature polarization-electric field hysteresis measurements show charge injection with increasing temperature, while positive-up-negative-down measurements show little temperature dependence of P-r up to temperatures of 200 °C. Poole-Frenkel emission dominated the high field leakage behavior. The refractive index measured by ellipsometry is 2.58 at 633 nm. All samples show significant retention loss. As the stoichiometry improves, retention improves such that >40% of the initial Δ P is retained over ≈ 280 min.
| Original language | English (US) |
|---|---|
| Article number | 8334275 |
| Pages (from-to) | 1534-1541 |
| Number of pages | 8 |
| Journal | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| Volume | 65 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 1 2018 |
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All Science Journal Classification (ASJC) codes
- Instrumentation
- Acoustics and Ultrasonics
- Electrical and Electronic Engineering
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Pulsed-Laser Deposited 35 Bi(Mg1/2Ti1/2)O3-65 PbTiO3 Thin Films - Part II : Influence of A-Site Deficiency and Thickness Scaling on Electric Properties. / Morandi, Carl; Trolier-McKinstry, Susan E.
In: IEEE transactions on ultrasonics, ferroelectrics, and frequency control, Vol. 65, No. 9, 8334275, 01.09.2018, p. 1534-1541.Research output: Contribution to journal › Article
TY - JOUR
T1 - Pulsed-Laser Deposited 35 Bi(Mg1/2Ti1/2)O3-65 PbTiO3 Thin Films - Part II
T2 - Influence of A-Site Deficiency and Thickness Scaling on Electric Properties
AU - Morandi, Carl
AU - Trolier-McKinstry, Susan E.
PY - 2018/9/1
Y1 - 2018/9/1
N2 - 35 Bi(Mg1/2Ti1/2)O3-65 PbTiO3 (35 BiMT-65 PT) thin films with varying levels of A-site deficiency were investigated as a potential candidate for high-temperature nonvolatile ferroelectric memories. PbTiO3 seed layers utilized to nucleate the perovskite phase in A-site deficient films induced a thickness dependence to the ferroelectric hysteresis and dielectric permittivity. Adjusting for this, the dielectric response of the 35 BiMT-65 PT films is ≈ 960. The maximum dielectric permittivity was 430 °C at 1 MHz for A-site deficient films. The transition temperature is independent of film thickness to 85 nm. Tan(δ) remains less than 15% at 1 MHz regardless of film thickness and temperature up to 585 °C. High-temperature polarization-electric field hysteresis measurements show charge injection with increasing temperature, while positive-up-negative-down measurements show little temperature dependence of P-r up to temperatures of 200 °C. Poole-Frenkel emission dominated the high field leakage behavior. The refractive index measured by ellipsometry is 2.58 at 633 nm. All samples show significant retention loss. As the stoichiometry improves, retention improves such that >40% of the initial Δ P is retained over ≈ 280 min.
AB - 35 Bi(Mg1/2Ti1/2)O3-65 PbTiO3 (35 BiMT-65 PT) thin films with varying levels of A-site deficiency were investigated as a potential candidate for high-temperature nonvolatile ferroelectric memories. PbTiO3 seed layers utilized to nucleate the perovskite phase in A-site deficient films induced a thickness dependence to the ferroelectric hysteresis and dielectric permittivity. Adjusting for this, the dielectric response of the 35 BiMT-65 PT films is ≈ 960. The maximum dielectric permittivity was 430 °C at 1 MHz for A-site deficient films. The transition temperature is independent of film thickness to 85 nm. Tan(δ) remains less than 15% at 1 MHz regardless of film thickness and temperature up to 585 °C. High-temperature polarization-electric field hysteresis measurements show charge injection with increasing temperature, while positive-up-negative-down measurements show little temperature dependence of P-r up to temperatures of 200 °C. Poole-Frenkel emission dominated the high field leakage behavior. The refractive index measured by ellipsometry is 2.58 at 633 nm. All samples show significant retention loss. As the stoichiometry improves, retention improves such that >40% of the initial Δ P is retained over ≈ 280 min.
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U2 - 10.1109/TUFFC.2018.2825019
DO - 10.1109/TUFFC.2018.2825019
M3 - Article
C2 - 29993828
AN - SCOPUS:85045180445
VL - 65
SP - 1534
EP - 1541
JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
SN - 0885-3010
IS - 9
M1 - 8334275
ER -