Pulsed-Laser Deposited 35 Bi(Mg1/2Ti1/2)O3-65 PbTiO3 Thin Films - Part II: Influence of A-Site Deficiency and Thickness Scaling on Electric Properties

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Abstract

35 Bi(Mg1/2Ti1/2)O3-65 PbTiO3 (35 BiMT-65 PT) thin films with varying levels of A-site deficiency were investigated as a potential candidate for high-temperature nonvolatile ferroelectric memories. PbTiO3 seed layers utilized to nucleate the perovskite phase in A-site deficient films induced a thickness dependence to the ferroelectric hysteresis and dielectric permittivity. Adjusting for this, the dielectric response of the 35 BiMT-65 PT films is ≈ 960. The maximum dielectric permittivity was 430 °C at 1 MHz for A-site deficient films. The transition temperature is independent of film thickness to 85 nm. Tan(δ) remains less than 15% at 1 MHz regardless of film thickness and temperature up to 585 °C. High-temperature polarization-electric field hysteresis measurements show charge injection with increasing temperature, while positive-up-negative-down measurements show little temperature dependence of P-r up to temperatures of 200 °C. Poole-Frenkel emission dominated the high field leakage behavior. The refractive index measured by ellipsometry is 2.58 at 633 nm. All samples show significant retention loss. As the stoichiometry improves, retention improves such that >40% of the initial Δ P is retained over ≈ 280 min.

Original languageEnglish (US)
Article number8334275
Pages (from-to)1534-1541
Number of pages8
JournalIEEE transactions on ultrasonics, ferroelectrics, and frequency control
Volume65
Issue number9
DOIs
StatePublished - Sep 1 2018

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Pulsed lasers
pulsed lasers
Electric properties
scaling
Thin films
film thickness
thin films
hysteresis
permittivity
Temperature
Ferroelectric materials
ellipsometry
temperature
Film thickness
Hysteresis
seeds
stoichiometry
leakage
Permittivity
adjusting

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering

Cite this

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title = "Pulsed-Laser Deposited 35 Bi(Mg1/2Ti1/2)O3-65 PbTiO3 Thin Films - Part II: Influence of A-Site Deficiency and Thickness Scaling on Electric Properties",
abstract = "35 Bi(Mg1/2Ti1/2)O3-65 PbTiO3 (35 BiMT-65 PT) thin films with varying levels of A-site deficiency were investigated as a potential candidate for high-temperature nonvolatile ferroelectric memories. PbTiO3 seed layers utilized to nucleate the perovskite phase in A-site deficient films induced a thickness dependence to the ferroelectric hysteresis and dielectric permittivity. Adjusting for this, the dielectric response of the 35 BiMT-65 PT films is ≈ 960. The maximum dielectric permittivity was 430 °C at 1 MHz for A-site deficient films. The transition temperature is independent of film thickness to 85 nm. Tan(δ) remains less than 15{\%} at 1 MHz regardless of film thickness and temperature up to 585 °C. High-temperature polarization-electric field hysteresis measurements show charge injection with increasing temperature, while positive-up-negative-down measurements show little temperature dependence of P-r up to temperatures of 200 °C. Poole-Frenkel emission dominated the high field leakage behavior. The refractive index measured by ellipsometry is 2.58 at 633 nm. All samples show significant retention loss. As the stoichiometry improves, retention improves such that >40{\%} of the initial Δ P is retained over ≈ 280 min.",
author = "Carl Morandi and Trolier-McKinstry, {Susan E.}",
year = "2018",
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doi = "10.1109/TUFFC.2018.2825019",
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AU - Morandi, Carl

AU - Trolier-McKinstry, Susan E.

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N2 - 35 Bi(Mg1/2Ti1/2)O3-65 PbTiO3 (35 BiMT-65 PT) thin films with varying levels of A-site deficiency were investigated as a potential candidate for high-temperature nonvolatile ferroelectric memories. PbTiO3 seed layers utilized to nucleate the perovskite phase in A-site deficient films induced a thickness dependence to the ferroelectric hysteresis and dielectric permittivity. Adjusting for this, the dielectric response of the 35 BiMT-65 PT films is ≈ 960. The maximum dielectric permittivity was 430 °C at 1 MHz for A-site deficient films. The transition temperature is independent of film thickness to 85 nm. Tan(δ) remains less than 15% at 1 MHz regardless of film thickness and temperature up to 585 °C. High-temperature polarization-electric field hysteresis measurements show charge injection with increasing temperature, while positive-up-negative-down measurements show little temperature dependence of P-r up to temperatures of 200 °C. Poole-Frenkel emission dominated the high field leakage behavior. The refractive index measured by ellipsometry is 2.58 at 633 nm. All samples show significant retention loss. As the stoichiometry improves, retention improves such that >40% of the initial Δ P is retained over ≈ 280 min.

AB - 35 Bi(Mg1/2Ti1/2)O3-65 PbTiO3 (35 BiMT-65 PT) thin films with varying levels of A-site deficiency were investigated as a potential candidate for high-temperature nonvolatile ferroelectric memories. PbTiO3 seed layers utilized to nucleate the perovskite phase in A-site deficient films induced a thickness dependence to the ferroelectric hysteresis and dielectric permittivity. Adjusting for this, the dielectric response of the 35 BiMT-65 PT films is ≈ 960. The maximum dielectric permittivity was 430 °C at 1 MHz for A-site deficient films. The transition temperature is independent of film thickness to 85 nm. Tan(δ) remains less than 15% at 1 MHz regardless of film thickness and temperature up to 585 °C. High-temperature polarization-electric field hysteresis measurements show charge injection with increasing temperature, while positive-up-negative-down measurements show little temperature dependence of P-r up to temperatures of 200 °C. Poole-Frenkel emission dominated the high field leakage behavior. The refractive index measured by ellipsometry is 2.58 at 633 nm. All samples show significant retention loss. As the stoichiometry improves, retention improves such that >40% of the initial Δ P is retained over ≈ 280 min.

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