Pyroelectric and dielectric properties of ferroelectric films with interposed dielectric buffer layers

Y. Espinal, M. T. Kesim, I. B. Misirlioglu, S. Trolier-McKinstry, J. V. Mantese, S. P. Alpay

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Abstract

The dielectric and pyroelectric properties of c -domain ferroelectric films with linear dielectric buffer layers were investigated theoretically. Computations were carried out for multilayers consisting of PbZr0.2Ti0.8O3 with Al2O3, SiO2, Si3 N4, HfO2, and TiO2 buffers on metalized Si. It is shown that the dielectric and pyroelectric properties of such multilayers can be increased by the presence of the buffer compared to ferroelectric monolayers. Calculations for PbZr0.2Ti0.8O3 films with 1% Al2O3 interposed between electrodes on Si show that the dielectric and pyroelectric coefficients are 310 and 0.070 μC cm-2 °C-1, respectively. Both values are higher than the intrinsic response of PbZr0.2Ti0.8O3 monolayer on Si.

Original languageEnglish (US)
Article number232905
JournalApplied Physics Letters
Volume105
Issue number23
DOIs
StatePublished - Dec 8 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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