Quality enhancement of low temperature metal organic chemical vapor deposited MoS2: An experimental and computational investigation

Zahabul Islam, Kehao Zhang, Joshua Alexander Robinson, Md Amanul Haque

Research output: Contribution to journalArticle

Abstract

Electronic quality of chemical vapor deposited MoS2 is a function of crystallinity, which tends to decline with decrease in deposition temperature. Conventional thermal annealing can improve the quality but requires very high temperatures. In this study, we investigate a novel low temperature (room temperature to 400 °C) annealing process that exploits the electron wind force during passage of current. Here, moderate current density gives rise to atomic scale mechanical force whenever the electrons encounter defects in the lattice or grain boundaries (GBs). After hypothesizing that this force can significantly enhance defect mobility without any temperature field, we demonstrate the process using in situ transmission electron microscope and molecular dynamics simulation. Monolayer metal organic chemical vapor deposited MoS2 deposited at 400 °C was post processed at temperature as low as 20 °C. Experimental results show five times enhancement in electrical conductivity, which is supported by electron diffraction patterns indicating significant grain growth. Discrete spots in diffraction indicate evolution of high crystallinity even at room temperature. Our computational model shows the mechanisms behind healing lattice defects as well as reorienting the GBs. The enhancement in microstructure of the specimen is also reflected in mechanical properties simulations on pre- and post-annealed specimens.

Original languageEnglish (US)
Article number395402
JournalNanotechnology
Volume30
Issue number39
DOIs
StatePublished - Jul 16 2019

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Organic Chemicals
Organic chemicals
Metals
Vapors
Temperature
Grain boundaries
Annealing
Defects
Electrons
Crystal defects
Grain growth
Electron diffraction
Crystal lattices
Diffraction patterns
Molecular dynamics
Monolayers
Temperature distribution
Current density
Electron microscopes
Diffraction

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

@article{035b551c49aa4863b0039f03636a1af1,
title = "Quality enhancement of low temperature metal organic chemical vapor deposited MoS2: An experimental and computational investigation",
abstract = "Electronic quality of chemical vapor deposited MoS2 is a function of crystallinity, which tends to decline with decrease in deposition temperature. Conventional thermal annealing can improve the quality but requires very high temperatures. In this study, we investigate a novel low temperature (room temperature to 400 °C) annealing process that exploits the electron wind force during passage of current. Here, moderate current density gives rise to atomic scale mechanical force whenever the electrons encounter defects in the lattice or grain boundaries (GBs). After hypothesizing that this force can significantly enhance defect mobility without any temperature field, we demonstrate the process using in situ transmission electron microscope and molecular dynamics simulation. Monolayer metal organic chemical vapor deposited MoS2 deposited at 400 °C was post processed at temperature as low as 20 °C. Experimental results show five times enhancement in electrical conductivity, which is supported by electron diffraction patterns indicating significant grain growth. Discrete spots in diffraction indicate evolution of high crystallinity even at room temperature. Our computational model shows the mechanisms behind healing lattice defects as well as reorienting the GBs. The enhancement in microstructure of the specimen is also reflected in mechanical properties simulations on pre- and post-annealed specimens.",
author = "Zahabul Islam and Kehao Zhang and Robinson, {Joshua Alexander} and Haque, {Md Amanul}",
year = "2019",
month = "7",
day = "16",
doi = "10.1088/1361-6528/ab2c3a",
language = "English (US)",
volume = "30",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "39",

}

TY - JOUR

T1 - Quality enhancement of low temperature metal organic chemical vapor deposited MoS2

T2 - An experimental and computational investigation

AU - Islam, Zahabul

AU - Zhang, Kehao

AU - Robinson, Joshua Alexander

AU - Haque, Md Amanul

PY - 2019/7/16

Y1 - 2019/7/16

N2 - Electronic quality of chemical vapor deposited MoS2 is a function of crystallinity, which tends to decline with decrease in deposition temperature. Conventional thermal annealing can improve the quality but requires very high temperatures. In this study, we investigate a novel low temperature (room temperature to 400 °C) annealing process that exploits the electron wind force during passage of current. Here, moderate current density gives rise to atomic scale mechanical force whenever the electrons encounter defects in the lattice or grain boundaries (GBs). After hypothesizing that this force can significantly enhance defect mobility without any temperature field, we demonstrate the process using in situ transmission electron microscope and molecular dynamics simulation. Monolayer metal organic chemical vapor deposited MoS2 deposited at 400 °C was post processed at temperature as low as 20 °C. Experimental results show five times enhancement in electrical conductivity, which is supported by electron diffraction patterns indicating significant grain growth. Discrete spots in diffraction indicate evolution of high crystallinity even at room temperature. Our computational model shows the mechanisms behind healing lattice defects as well as reorienting the GBs. The enhancement in microstructure of the specimen is also reflected in mechanical properties simulations on pre- and post-annealed specimens.

AB - Electronic quality of chemical vapor deposited MoS2 is a function of crystallinity, which tends to decline with decrease in deposition temperature. Conventional thermal annealing can improve the quality but requires very high temperatures. In this study, we investigate a novel low temperature (room temperature to 400 °C) annealing process that exploits the electron wind force during passage of current. Here, moderate current density gives rise to atomic scale mechanical force whenever the electrons encounter defects in the lattice or grain boundaries (GBs). After hypothesizing that this force can significantly enhance defect mobility without any temperature field, we demonstrate the process using in situ transmission electron microscope and molecular dynamics simulation. Monolayer metal organic chemical vapor deposited MoS2 deposited at 400 °C was post processed at temperature as low as 20 °C. Experimental results show five times enhancement in electrical conductivity, which is supported by electron diffraction patterns indicating significant grain growth. Discrete spots in diffraction indicate evolution of high crystallinity even at room temperature. Our computational model shows the mechanisms behind healing lattice defects as well as reorienting the GBs. The enhancement in microstructure of the specimen is also reflected in mechanical properties simulations on pre- and post-annealed specimens.

UR - http://www.scopus.com/inward/record.url?scp=85069897781&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85069897781&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/ab2c3a

DO - 10.1088/1361-6528/ab2c3a

M3 - Article

C2 - 31234158

AN - SCOPUS:85069897781

VL - 30

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 39

M1 - 395402

ER -