Quantification of trap densities at dielectric/III-V semiconductor interfaces

Roman Engel-Herbert, Yoontae Hwang, Susanne Stemmer

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

High-frequency capacitance-voltage curves for capacitors with high- k gate dielectrics and III-V semiconductor channels are modeled. The model takes into account the low conduction band density of states, the nonparabolicity of the valley, and the population of higher lying conduction band valleys. The model is used to determine interface trap densities (Dit) and band bending of HfO2/In0.53 Ga0.47 As interfaces with different Dit and with pinned and unpinned Fermi levels, respectively. Potential sources of errors in extracting Dit are discussed and criteria that establish unpinned interfaces are developed.

Original languageEnglish (US)
Article number062905
JournalApplied Physics Letters
Volume97
Issue number6
DOIs
StatePublished - Aug 9 2010

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traps
valleys
conduction bands
capacitors
capacitance
electric potential
curves

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Quantification of trap densities at dielectric/III-V semiconductor interfaces. / Engel-Herbert, Roman; Hwang, Yoontae; Stemmer, Susanne.

In: Applied Physics Letters, Vol. 97, No. 6, 062905, 09.08.2010.

Research output: Contribution to journalArticle

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