Quantitative analysis of nanoscale electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor structure

D. M. Schaadt, E. J. Miller, E. T. Yu, J. M. Redwing

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations

Abstract

Local dC/dV spectroscopy performed in a SCM was used to quantify and map the threshold voltage distribution in an AlGa-N/GaN HFET structure. Small round features were attributed to the effect of the electrostatic potential of charged threading dislocations that cause localized reduction or depletion of carriers from the 2DEG. An analytical model and simulations of electrostatic potential and electron concentration were compared and used to explain the observed features.

Original languageEnglish (US)
Pages (from-to)1671-1674
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number4
DOIs
StatePublished - Jul 1 2001
Event19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States
Duration: Oct 15 2000Oct 18 2000

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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