The influence of surface S2- dangling bonds and surface doped ions(Se2-, Cu2+, and Hg2+) on the photoluminescence of Cd2+-rich CdS QDs was investigated. A quantitative model was proposed to understand the complex transfer processes of excited electrons in CdS QDs. The transfer of excited electrons from either the conduction band or the Cd2+-related trap-state to the surface S2--related shallow hole trap-state is effective. However, the trap of excited electrons by surface doped ion trap-states from the Cd2+-related trap-state is more effective than that from the conduction band. The efficiency of trapping electrons from both the conduction band and the Cd2+-related trap-state can be quantitatively understood with the help of the proposed model. The results show that the transfer efficiency of excited electrons is dependent on the location of the energy-level of the relevant surface-related trap-state. The trap of excited electrons by the surface trap-state with energy-level closer to that of the conduction band is more effective, especially for the trap of excited electrons from Cd2+-related trap-state.
|Original language||English (US)|
|Number of pages||8|
|Journal||Chemical Research in Chinese Universities|
|State||Published - Dec 1 2009|
All Science Journal Classification (ASJC) codes