Quantitative model for the surface-related electron transfer in CdS quantum dots

Chao Biao Huang, Chuan Liu Wu, Shu Yan Li, Jinping Lai, Yi Bing Zhao

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The influence of surface S2- dangling bonds and surface doped ions(Se2-, Cu2+, and Hg2+) on the photoluminescence of Cd2+-rich CdS QDs was investigated. A quantitative model was proposed to understand the complex transfer processes of excited electrons in CdS QDs. The transfer of excited electrons from either the conduction band or the Cd2+-related trap-state to the surface S2--related shallow hole trap-state is effective. However, the trap of excited electrons by surface doped ion trap-states from the Cd2+-related trap-state is more effective than that from the conduction band. The efficiency of trapping electrons from both the conduction band and the Cd2+-related trap-state can be quantitatively understood with the help of the proposed model. The results show that the transfer efficiency of excited electrons is dependent on the location of the energy-level of the relevant surface-related trap-state. The trap of excited electrons by the surface trap-state with energy-level closer to that of the conduction band is more effective, especially for the trap of excited electrons from Cd2+-related trap-state.

Original languageEnglish (US)
Pages (from-to)17-24
Number of pages8
JournalChemical Research in Chinese Universities
Volume25
Issue number1
StatePublished - Dec 1 2009

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Semiconductor quantum dots
Electrons
Conduction bands
Electron energy levels
Ions
Hole traps
Dangling bonds
Photoluminescence

All Science Journal Classification (ASJC) codes

  • Chemistry(all)

Cite this

Huang, Chao Biao ; Wu, Chuan Liu ; Li, Shu Yan ; Lai, Jinping ; Zhao, Yi Bing. / Quantitative model for the surface-related electron transfer in CdS quantum dots. In: Chemical Research in Chinese Universities. 2009 ; Vol. 25, No. 1. pp. 17-24.
@article{3518abd4e03e45d790baede3a4acea61,
title = "Quantitative model for the surface-related electron transfer in CdS quantum dots",
abstract = "The influence of surface S2- dangling bonds and surface doped ions(Se2-, Cu2+, and Hg2+) on the photoluminescence of Cd2+-rich CdS QDs was investigated. A quantitative model was proposed to understand the complex transfer processes of excited electrons in CdS QDs. The transfer of excited electrons from either the conduction band or the Cd2+-related trap-state to the surface S2--related shallow hole trap-state is effective. However, the trap of excited electrons by surface doped ion trap-states from the Cd2+-related trap-state is more effective than that from the conduction band. The efficiency of trapping electrons from both the conduction band and the Cd2+-related trap-state can be quantitatively understood with the help of the proposed model. The results show that the transfer efficiency of excited electrons is dependent on the location of the energy-level of the relevant surface-related trap-state. The trap of excited electrons by the surface trap-state with energy-level closer to that of the conduction band is more effective, especially for the trap of excited electrons from Cd2+-related trap-state.",
author = "Huang, {Chao Biao} and Wu, {Chuan Liu} and Li, {Shu Yan} and Jinping Lai and Zhao, {Yi Bing}",
year = "2009",
month = "12",
day = "1",
language = "English (US)",
volume = "25",
pages = "17--24",
journal = "Chemical Research in Chinese Universities",
issn = "1005-9040",
publisher = "Jilin University Press",
number = "1",

}

Quantitative model for the surface-related electron transfer in CdS quantum dots. / Huang, Chao Biao; Wu, Chuan Liu; Li, Shu Yan; Lai, Jinping; Zhao, Yi Bing.

In: Chemical Research in Chinese Universities, Vol. 25, No. 1, 01.12.2009, p. 17-24.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Quantitative model for the surface-related electron transfer in CdS quantum dots

AU - Huang, Chao Biao

AU - Wu, Chuan Liu

AU - Li, Shu Yan

AU - Lai, Jinping

AU - Zhao, Yi Bing

PY - 2009/12/1

Y1 - 2009/12/1

N2 - The influence of surface S2- dangling bonds and surface doped ions(Se2-, Cu2+, and Hg2+) on the photoluminescence of Cd2+-rich CdS QDs was investigated. A quantitative model was proposed to understand the complex transfer processes of excited electrons in CdS QDs. The transfer of excited electrons from either the conduction band or the Cd2+-related trap-state to the surface S2--related shallow hole trap-state is effective. However, the trap of excited electrons by surface doped ion trap-states from the Cd2+-related trap-state is more effective than that from the conduction band. The efficiency of trapping electrons from both the conduction band and the Cd2+-related trap-state can be quantitatively understood with the help of the proposed model. The results show that the transfer efficiency of excited electrons is dependent on the location of the energy-level of the relevant surface-related trap-state. The trap of excited electrons by the surface trap-state with energy-level closer to that of the conduction band is more effective, especially for the trap of excited electrons from Cd2+-related trap-state.

AB - The influence of surface S2- dangling bonds and surface doped ions(Se2-, Cu2+, and Hg2+) on the photoluminescence of Cd2+-rich CdS QDs was investigated. A quantitative model was proposed to understand the complex transfer processes of excited electrons in CdS QDs. The transfer of excited electrons from either the conduction band or the Cd2+-related trap-state to the surface S2--related shallow hole trap-state is effective. However, the trap of excited electrons by surface doped ion trap-states from the Cd2+-related trap-state is more effective than that from the conduction band. The efficiency of trapping electrons from both the conduction band and the Cd2+-related trap-state can be quantitatively understood with the help of the proposed model. The results show that the transfer efficiency of excited electrons is dependent on the location of the energy-level of the relevant surface-related trap-state. The trap of excited electrons by the surface trap-state with energy-level closer to that of the conduction band is more effective, especially for the trap of excited electrons from Cd2+-related trap-state.

UR - http://www.scopus.com/inward/record.url?scp=77954000771&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954000771&partnerID=8YFLogxK

M3 - Article

VL - 25

SP - 17

EP - 24

JO - Chemical Research in Chinese Universities

JF - Chemical Research in Chinese Universities

SN - 1005-9040

IS - 1

ER -