Quantitative model of radiation induced charge trapping in SiO2

J. F. Conley, Patrick M. Lenahan, B. D. Wallace, P. Cole

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

A predictive model of radiation induced oxide charging, based on statistical thermodynamics and electron spin resonance measurements of defects known as E′ centers, has been developed. The model is successfully tested on 60Co irradiated MOSFETs.

Original languageEnglish (US)
Pages (from-to)1804-1809
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume44
Issue number6 PART 1
StatePublished - Dec 1 1997

Fingerprint

Charge trapping
trapping
Radiation
Statistical mechanics
radiation
Paramagnetic resonance
charging
electron paramagnetic resonance
field effect transistors
thermodynamics
Defects
Oxides
oxides
defects

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Conley, J. F., Lenahan, P. M., Wallace, B. D., & Cole, P. (1997). Quantitative model of radiation induced charge trapping in SiO2. IEEE Transactions on Nuclear Science, 44(6 PART 1), 1804-1809.
Conley, J. F. ; Lenahan, Patrick M. ; Wallace, B. D. ; Cole, P. / Quantitative model of radiation induced charge trapping in SiO2. In: IEEE Transactions on Nuclear Science. 1997 ; Vol. 44, No. 6 PART 1. pp. 1804-1809.
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Conley, JF, Lenahan, PM, Wallace, BD & Cole, P 1997, 'Quantitative model of radiation induced charge trapping in SiO2', IEEE Transactions on Nuclear Science, vol. 44, no. 6 PART 1, pp. 1804-1809.

Quantitative model of radiation induced charge trapping in SiO2. / Conley, J. F.; Lenahan, Patrick M.; Wallace, B. D.; Cole, P.

In: IEEE Transactions on Nuclear Science, Vol. 44, No. 6 PART 1, 01.12.1997, p. 1804-1809.

Research output: Contribution to journalArticle

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