Quantitative probing of surface charges at dielectric-electrolyte interfaces

Weihua Guan, Nitin K. Rajan, Xuexin Duan, Mark A. Reed

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The intrinsic charging status at the dielectric-electrolyte interface (DEI) plays a critical role for electrofluidic gating in microfluidics and nanofluidics, which offers opportunities for integration of wet ionics with dry electronics. A convenient approach to quantitatively probe the surface charges at the DEI for material pre-selection purpose has been lacking so far. We report here a low-cost, off-chip extended gate field effect transistor configuration for direct electrostatic probing the charging status at the DEI. Capacitive coupling between the surface charges and the floating extended gate is utilized for signal transducing. The relationship between the surface charge density and the experimentally accessible quantities is given by device modeling. The multiplexing ability makes measuring a local instead of a globally averaged surface charge possible.

Original languageEnglish (US)
Pages (from-to)1431-1436
Number of pages6
JournalLab on a Chip
Volume13
Issue number7
DOIs
StatePublished - Apr 7 2013

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Surface charge
Electrolytes
Microfluidics
Nanofluidics
Static Electricity
Gates (transistor)
Charge density
Multiplexing
Costs and Cost Analysis
Electrostatics
Equipment and Supplies
Electronic equipment
Costs

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Biochemistry
  • Chemistry(all)
  • Biomedical Engineering

Cite this

Guan, Weihua ; Rajan, Nitin K. ; Duan, Xuexin ; Reed, Mark A. / Quantitative probing of surface charges at dielectric-electrolyte interfaces. In: Lab on a Chip. 2013 ; Vol. 13, No. 7. pp. 1431-1436.
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Quantitative probing of surface charges at dielectric-electrolyte interfaces. / Guan, Weihua; Rajan, Nitin K.; Duan, Xuexin; Reed, Mark A.

In: Lab on a Chip, Vol. 13, No. 7, 07.04.2013, p. 1431-1436.

Research output: Contribution to journalArticle

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