Quantum anomalous hall effect in magnetically doped InAs/GaSb quantum wells

Qing Ze Wang, Xin Liu, Hai Jun Zhang, Nitin Samarth, Shou Cheng Zhang, Chao Xing Liu

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Abstract

The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr-doped (Bi,Sb)2Te3 at a low temperature (∼30mK). In this work, we propose realizing the quantum anomalous Hall effect in more conventional diluted magnetic semiconductors with magnetically doped InAs/GaSb type-II quantum wells. Based on a four-band model, we find an enhancement of the Curie temperature of ferromagnetism due to band edge singularities in the inverted regime of InAs/GaSb quantum wells. Below the Curie temperature, the quantum anomalous Hall effect is confirmed by the direct calculation of Hall conductance. The parameter regime for the quantum anomalous Hall phase is identified based on the eight-band Kane model. The high sample quality and strong exchange coupling make magnetically doped InAs/GaSb quantum wells good candidates for realizing the quantum anomalous Hall insulator at a high temperature.

Original languageEnglish (US)
Article number147201
JournalPhysical review letters
Volume113
Issue number14
DOIs
StatePublished - Sep 29 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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