Quantum dots from carbon nanotube junctions

Fabrizio Cleri, Pawel Keblinski, Inkook Jang, Susan B. Sinnott

Research output: Contribution to journalArticle

Abstract

A tight-binding hamiltonian is used to study the electronic properties of covalently-bonded, crossed (5,5) metallic nanotubes with increasing degree of disorder in the junction region. At one extreme, ideal junctions between coplanar nanotubes with a minimal number of topological defects show a good ohmic behavior. Upon increasing disorder, ohmic conduction is suppressed in favor of hopping conductivity. At the opposite extreme, strongly disordered junctions as could be obtained after electron-beam irradiation of overlayed nanotubes, display weak localization and energy quantization, indicating the formation of a quantum dot contacted to metallic nanowires by tunnel barriers.

Original languageEnglish (US)
Pages (from-to)417-423
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
Volume789
StatePublished - 2003

Fingerprint

Carbon Nanotubes
Nanotubes
Semiconductor quantum dots
Carbon nanotubes
nanotubes
carbon nanotubes
quantum dots
disorders
Hamiltonians
Electronic properties
Nanowires
tunnels
Electron beams
Tunnels
nanowires
Irradiation
electron beams
conduction
conductivity
Defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Cleri, Fabrizio ; Keblinski, Pawel ; Jang, Inkook ; Sinnott, Susan B. / Quantum dots from carbon nanotube junctions. In: Materials Research Society Symposium - Proceedings. 2003 ; Vol. 789. pp. 417-423.
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Quantum dots from carbon nanotube junctions. / Cleri, Fabrizio; Keblinski, Pawel; Jang, Inkook; Sinnott, Susan B.

In: Materials Research Society Symposium - Proceedings, Vol. 789, 2003, p. 417-423.

Research output: Contribution to journalArticle

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