Quantum Hall effect from the topological surface states of strained bulk HgTe

C. Brüne, C. X. Liu, E. G. Novik, E. M. Hankiewicz, H. Buhmann, Y. L. Chen, X. L. Qi, Z. X. Shen, S. C. Zhang, L. W. Molenkamp

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Abstract

We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.

Original languageEnglish (US)
Article number126803
JournalPhysical review letters
Volume106
Issue number12
DOIs
StatePublished - Mar 22 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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