Quantum Hall effect from the topological surface states of strained bulk HgTe

C. Brüne, C. X. Liu, E. G. Novik, E. M. Hankiewicz, H. Buhmann, Y. L. Chen, X. L. Qi, Z. X. Shen, S. C. Zhang, L. W. Molenkamp

Research output: Contribution to journalArticle

314 Citations (Scopus)

Abstract

We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.

Original languageEnglish (US)
Article number126803
JournalPhysical Review Letters
Volume106
Issue number12
DOIs
StatePublished - Mar 22 2011

Fingerprint

quantum Hall effect
Hall effect
cones
transport properties
insulators
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Brüne, C., Liu, C. X., Novik, E. G., Hankiewicz, E. M., Buhmann, H., Chen, Y. L., ... Molenkamp, L. W. (2011). Quantum Hall effect from the topological surface states of strained bulk HgTe. Physical Review Letters, 106(12), [126803]. https://doi.org/10.1103/PhysRevLett.106.126803
Brüne, C. ; Liu, C. X. ; Novik, E. G. ; Hankiewicz, E. M. ; Buhmann, H. ; Chen, Y. L. ; Qi, X. L. ; Shen, Z. X. ; Zhang, S. C. ; Molenkamp, L. W. / Quantum Hall effect from the topological surface states of strained bulk HgTe. In: Physical Review Letters. 2011 ; Vol. 106, No. 12.
@article{c96495aae5c84d4d91442b77bb0e16ac,
title = "Quantum Hall effect from the topological surface states of strained bulk HgTe",
abstract = "We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.",
author = "C. Br{\"u}ne and Liu, {C. X.} and Novik, {E. G.} and Hankiewicz, {E. M.} and H. Buhmann and Chen, {Y. L.} and Qi, {X. L.} and Shen, {Z. X.} and Zhang, {S. C.} and Molenkamp, {L. W.}",
year = "2011",
month = "3",
day = "22",
doi = "10.1103/PhysRevLett.106.126803",
language = "English (US)",
volume = "106",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "12",

}

Brüne, C, Liu, CX, Novik, EG, Hankiewicz, EM, Buhmann, H, Chen, YL, Qi, XL, Shen, ZX, Zhang, SC & Molenkamp, LW 2011, 'Quantum Hall effect from the topological surface states of strained bulk HgTe', Physical Review Letters, vol. 106, no. 12, 126803. https://doi.org/10.1103/PhysRevLett.106.126803

Quantum Hall effect from the topological surface states of strained bulk HgTe. / Brüne, C.; Liu, C. X.; Novik, E. G.; Hankiewicz, E. M.; Buhmann, H.; Chen, Y. L.; Qi, X. L.; Shen, Z. X.; Zhang, S. C.; Molenkamp, L. W.

In: Physical Review Letters, Vol. 106, No. 12, 126803, 22.03.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Quantum Hall effect from the topological surface states of strained bulk HgTe

AU - Brüne, C.

AU - Liu, C. X.

AU - Novik, E. G.

AU - Hankiewicz, E. M.

AU - Buhmann, H.

AU - Chen, Y. L.

AU - Qi, X. L.

AU - Shen, Z. X.

AU - Zhang, S. C.

AU - Molenkamp, L. W.

PY - 2011/3/22

Y1 - 2011/3/22

N2 - We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.

AB - We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.

UR - http://www.scopus.com/inward/record.url?scp=79952951345&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952951345&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.106.126803

DO - 10.1103/PhysRevLett.106.126803

M3 - Article

AN - SCOPUS:79952951345

VL - 106

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 12

M1 - 126803

ER -