Quantum mechanical effects on the threshold voltage of nanoscale dual channel strained Si/strained Si1-yGey/relaxed Si 1-xGex MOSFETs

Kang EngSiew, Sohail Anwar, Razali Ismail

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

In this paper, a new analytical model derived for the threshold voltage, Vth of dual channel strained Si/Strained Si1-yGe y/relaxed Si1-xGex pMOSFETs, including the Quantum Mechanical Effects (QMEs) is presented. The goal of this model is to investigate the impact of QMEs on the magnitude of the oxide thickness, flatband voltage and threshold voltage for 45 nm channel length. Under QMEs, the carrier charges in extended states and quantized states contribute to the increases in the threshold voltage. Our model includes the effects of strain, channel length, oxide thickness, and also substrate doping concentration. The quantum confinement and carrier quantization on the shift of Vth are briefly explained. In addition, it is demonstrated that both the electron affinity and bandgap of strained Si1-yGey and relaxed Si 1-xGex contribute to the changes in threshold voltage. Our analytical results offer good accuracy when compared to 2D Atlas simulated results and data available in the literature.

Original languageEnglish (US)
Pages (from-to)1231-1235
Number of pages5
JournalJournal of Computational and Theoretical Nanoscience
Volume10
Issue number5
DOIs
StatePublished - May 1 2013

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Computational Mathematics
  • Electrical and Electronic Engineering

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