Quasireversible magnetoresistance in exchange-spring tunnel junctions

M. Zhu, M. J. Wilson, P. Mitra, P. Schiffer, Nitin Samarth

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report a large, quasireversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor (Ga1-x Mnx As) is exchange coupled to a hard ferromagnetic metal (MnAs). Our observations are consistent with the formation of a region of inhomogeneous magnetization (an "exchange spring") within the biased Ga1-x Mnx As layer. The distinctive tunneling anisotropic magnetoresistance of Ga1-x Mnx As produces a pronounced sensitivity of the magnetoresistance to the state of the exchange spring.

Original languageEnglish (US)
Article number195307
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume78
Issue number19
DOIs
StatePublished - Nov 10 2008

Fingerprint

Tunnel junctions
Magnetoresistance
tunnel junctions
Tunnelling magnetoresistance
Enhanced magnetoresistance
Semiconductor materials
Ferromagnetic materials
tunnels
Magnetization
Tunnels
magnetization
sensitivity
metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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Quasireversible magnetoresistance in exchange-spring tunnel junctions. / Zhu, M.; Wilson, M. J.; Mitra, P.; Schiffer, P.; Samarth, Nitin.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 78, No. 19, 195307, 10.11.2008.

Research output: Contribution to journalArticle

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AU - Zhu, M.

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AU - Mitra, P.

AU - Schiffer, P.

AU - Samarth, Nitin

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AB - We report a large, quasireversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor (Ga1-x Mnx As) is exchange coupled to a hard ferromagnetic metal (MnAs). Our observations are consistent with the formation of a region of inhomogeneous magnetization (an "exchange spring") within the biased Ga1-x Mnx As layer. The distinctive tunneling anisotropic magnetoresistance of Ga1-x Mnx As produces a pronounced sensitivity of the magnetoresistance to the state of the exchange spring.

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