We report a large, quasireversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor (Ga1-x Mnx As) is exchange coupled to a hard ferromagnetic metal (MnAs). Our observations are consistent with the formation of a region of inhomogeneous magnetization (an "exchange spring") within the biased Ga1-x Mnx As layer. The distinctive tunneling anisotropic magnetoresistance of Ga1-x Mnx As produces a pronounced sensitivity of the magnetoresistance to the state of the exchange spring.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Nov 10 2008|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics