Radial Junction Silicon Nanowire Photovoltaics with Heterojunction with Intrinsic Thin Layer (HIT) Structure

Xin Wang, Haoting Shen, Sarah M. Eichfield, Theresa S. Mayer, Joan M. Redwing

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Single-wire radial p-i-n heterojunction with intrinsic thin layer nanowire solar cell devices were fabricated by plasma-enhanced chemical vapor deposition of thin intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) shell layers on p-type silicon nanowires synthesized by vapor-liquid-solid growth. The thin intrinsic a-Si:H layer provided an effective passivation of the crystalline Si nanowire surface, and the corresponding device exhibits a dark current density of 1.6 × 10-7 A/cm2. Under one-sun illumination, the device shows a short-circuit current (Isc) of 2.66 × 10-7 mA, open-circuit voltage (Voc) of 0.46 V, fill factor (ff) of 0.52, and energy conversion efficiency (η) of 6.3%. Indium tin oxide (ITO) contacts were also deposited on the n-type shell as an antireflection layer to improve light absorption in the nanowire device. After ITO deposition, the device exhibited a larger Isc of 2.75 × 10-7 mA, but the overall efficiency decreased due to a larger leakage current and lower Voc.

Original languageEnglish (US)
Pages (from-to)1446-1450
Number of pages5
JournalIEEE Journal of Photovoltaics
Volume6
Issue number6
DOIs
StatePublished - Nov 2016

Fingerprint

silicon junctions
Silicon
Nanowires
Heterojunctions
heterojunctions
nanowires
Tin oxides
Indium
indium oxides
tin oxides
Dark currents
Open circuit voltage
Plasma enhanced chemical vapor deposition
Amorphous silicon
Energy conversion
Passivation
Leakage currents
Short circuit currents
Sun
Light absorption

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Wang, Xin ; Shen, Haoting ; Eichfield, Sarah M. ; Mayer, Theresa S. ; Redwing, Joan M. / Radial Junction Silicon Nanowire Photovoltaics with Heterojunction with Intrinsic Thin Layer (HIT) Structure. In: IEEE Journal of Photovoltaics. 2016 ; Vol. 6, No. 6. pp. 1446-1450.
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abstract = "Single-wire radial p-i-n heterojunction with intrinsic thin layer nanowire solar cell devices were fabricated by plasma-enhanced chemical vapor deposition of thin intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) shell layers on p-type silicon nanowires synthesized by vapor-liquid-solid growth. The thin intrinsic a-Si:H layer provided an effective passivation of the crystalline Si nanowire surface, and the corresponding device exhibits a dark current density of 1.6 × 10-7 A/cm2. Under one-sun illumination, the device shows a short-circuit current (Isc) of 2.66 × 10-7 mA, open-circuit voltage (Voc) of 0.46 V, fill factor (ff) of 0.52, and energy conversion efficiency (η) of 6.3{\%}. Indium tin oxide (ITO) contacts were also deposited on the n-type shell as an antireflection layer to improve light absorption in the nanowire device. After ITO deposition, the device exhibited a larger Isc of 2.75 × 10-7 mA, but the overall efficiency decreased due to a larger leakage current and lower Voc.",
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Radial Junction Silicon Nanowire Photovoltaics with Heterojunction with Intrinsic Thin Layer (HIT) Structure. / Wang, Xin; Shen, Haoting; Eichfield, Sarah M.; Mayer, Theresa S.; Redwing, Joan M.

In: IEEE Journal of Photovoltaics, Vol. 6, No. 6, 11.2016, p. 1446-1450.

Research output: Contribution to journalArticle

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