Radial Junction Silicon Nanowire Photovoltaics with Heterojunction with Intrinsic Thin Layer (HIT) Structure

Xin Wang, Haoting Shen, Sarah M. Eichfield, Theresa S. Mayer, Joan M. Redwing

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Single-wire radial p-i-n heterojunction with intrinsic thin layer nanowire solar cell devices were fabricated by plasma-enhanced chemical vapor deposition of thin intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) shell layers on p-type silicon nanowires synthesized by vapor-liquid-solid growth. The thin intrinsic a-Si:H layer provided an effective passivation of the crystalline Si nanowire surface, and the corresponding device exhibits a dark current density of 1.6 × 10-7 A/cm2. Under one-sun illumination, the device shows a short-circuit current (Isc) of 2.66 × 10-7 mA, open-circuit voltage (Voc) of 0.46 V, fill factor (ff) of 0.52, and energy conversion efficiency (η) of 6.3%. Indium tin oxide (ITO) contacts were also deposited on the n-type shell as an antireflection layer to improve light absorption in the nanowire device. After ITO deposition, the device exhibited a larger Isc of 2.75 × 10-7 mA, but the overall efficiency decreased due to a larger leakage current and lower Voc.

Original languageEnglish (US)
Pages (from-to)1446-1450
Number of pages5
JournalIEEE Journal of Photovoltaics
Volume6
Issue number6
DOIs
StatePublished - Nov 2016

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Radial Junction Silicon Nanowire Photovoltaics with Heterojunction with Intrinsic Thin Layer (HIT) Structure'. Together they form a unique fingerprint.

Cite this