Radiation-hard ZnO thin film transistors

J. Israel Ramirez, Yuanyuan V. Li, Hitesh Basantani, Kevin Leedy, Burhan Bayraktaroglu, Gregg H. Jessen, Thomas N. Jackson

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We report effects for up to 100 Mrad (SiO2) gamma-ray exposure on polycrystalline ZnO thin film transistors (TFTs) deposited by two different techniques. The radiation related TFT changes, either with or without electrical bias during irradiation, are primarily a negative VON shift and a smaller VT shift (Δ VON ∼ - 2.5V and Δ VT ∼ - 1.5V for 100 Mrad (SiO2) exposure). Field-effect mobility remains nearly unchanged. Both, VON and VT shifts are nearly completely removed by annealing at 200°C for 1 minute and some recovery is seen even at room temperature. We find that our ZnO TFTs are insensitive to electrical bias during irradiation; that is, unbiased measurements are useful worst case test results. To the best of our knowledge, these are the most radiation-hard thin film transistors reported to date.

Original languageEnglish (US)
Article number7100947
Pages (from-to)1399-1404
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume62
Issue number3
DOIs
StatePublished - Jun 1 2015

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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