Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors

P. Wang, C. Perini, A. O'Hara, B. R. Tuttle, E. X. Zhang, H. Gong, L. Dong, C. Liang, R. Jiang, W. Liao, D. M. Fleetwood, R. D. Schrimpf, E. M. Vogel, S. T. Pantelides

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


We have performed a detailed evaluation of radiation-induced charge trapping and low-frequency noise for back-gated graphene transistors fabricated on a thermal SiO2 layer, with Al2O3 or hexagonal boron nitride passivation over-layers. Irradiation with positive or 0 V back-gate bias leads to negative shifts of the charge neutral point (CNP) of the graphene transistors; irradiation under negative back-gate bias leads to positive CNP shifts. The low-frequency noise increases with irradiation and decreases with 400 K postirradiation annealing. The temperature dependence of the noise is described well by the Dutta-Horn model of low-frequency noise. Peaks in effective defect-energy distributions of irradiated devices at 0.4 and 0.7 eV are identified via measurements of the temperature dependence of the low-frequency noise. The noise of as-processed devices stored in room ambient also decreases with baking, but does not show the clear peaks observed after irradiation. Density functional theory calculations suggest that OH- and H+ at or near the graphene/dielectric interfaces likely play key roles in both the irradiation and baking response. Low-frequency noise and CNP voltage shifts during switched-bias postirradiation annealing at room temperature also suggest significant roles for O vacancies in the near interfacial SiO2 and/or passivation layers.

Original languageEnglish (US)
Article number8063913
Pages (from-to)156-163
Number of pages8
JournalIEEE Transactions on Nuclear Science
Issue number1
StatePublished - Jan 2018

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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