Radiation-induced defect states in low to moderately boron-doped silicon

Research output: Contribution to journalArticle

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Abstract

Low to moderately boron-doped silicon crystals were irradiated at room temperature with a 2.0-MeV electron beam and studied by means of deep-level transient spectroscopy. New dominant hole traps H(0.12) and H(0.07) located, respectively, at 0.12 and 0.07 eV above the valence band, and an electron trap E(0.59) located at 0.59 eV below the conduction band are reported. The states H(0.12), produced directly after irradiation, and H(0.07), formed following 400 °C annealing, are observed in samples of low boron contents (∼10 14 cm-3). The state E(0.59), on the other hand, is observed after 400 °C annealing in the moderately boron-doped samples (∼1015 cm-3). Based on the thermal stability and energy position of these states tentative defect identifications are proposed by correlation with published data. Other previously reported hole traps are observed at 0.22 and 0.34 eV above the valence band and are ascribed to the divacancy V2 (0/+) and the carbon interstitial-carbon substitutional pair, respectively.

Original languageEnglish (US)
Pages (from-to)6301-6305
Number of pages5
JournalJournal of Applied Physics
Volume64
Issue number11
DOIs
StatePublished - Dec 1 1988

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boron
traps
defects
silicon
radiation
valence
annealing
carbon
thermal energy
conduction bands
interstitials
thermal stability
electron beams
irradiation
room temperature
spectroscopy
crystals
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{56d81a2032d9419eb75aa86989d29733,
title = "Radiation-induced defect states in low to moderately boron-doped silicon",
abstract = "Low to moderately boron-doped silicon crystals were irradiated at room temperature with a 2.0-MeV electron beam and studied by means of deep-level transient spectroscopy. New dominant hole traps H(0.12) and H(0.07) located, respectively, at 0.12 and 0.07 eV above the valence band, and an electron trap E(0.59) located at 0.59 eV below the conduction band are reported. The states H(0.12), produced directly after irradiation, and H(0.07), formed following 400 °C annealing, are observed in samples of low boron contents (∼10 14 cm-3). The state E(0.59), on the other hand, is observed after 400 °C annealing in the moderately boron-doped samples (∼1015 cm-3). Based on the thermal stability and energy position of these states tentative defect identifications are proposed by correlation with published data. Other previously reported hole traps are observed at 0.22 and 0.34 eV above the valence band and are ascribed to the divacancy V2 (0/+) and the carbon interstitial-carbon substitutional pair, respectively.",
author = "Awadelkarim, {Osama O.} and B. Monemar",
year = "1988",
month = "12",
day = "1",
doi = "10.1063/1.342089",
language = "English (US)",
volume = "64",
pages = "6301--6305",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

Radiation-induced defect states in low to moderately boron-doped silicon. / Awadelkarim, Osama O.; Monemar, B.

In: Journal of Applied Physics, Vol. 64, No. 11, 01.12.1988, p. 6301-6305.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Radiation-induced defect states in low to moderately boron-doped silicon

AU - Awadelkarim, Osama O.

AU - Monemar, B.

PY - 1988/12/1

Y1 - 1988/12/1

N2 - Low to moderately boron-doped silicon crystals were irradiated at room temperature with a 2.0-MeV electron beam and studied by means of deep-level transient spectroscopy. New dominant hole traps H(0.12) and H(0.07) located, respectively, at 0.12 and 0.07 eV above the valence band, and an electron trap E(0.59) located at 0.59 eV below the conduction band are reported. The states H(0.12), produced directly after irradiation, and H(0.07), formed following 400 °C annealing, are observed in samples of low boron contents (∼10 14 cm-3). The state E(0.59), on the other hand, is observed after 400 °C annealing in the moderately boron-doped samples (∼1015 cm-3). Based on the thermal stability and energy position of these states tentative defect identifications are proposed by correlation with published data. Other previously reported hole traps are observed at 0.22 and 0.34 eV above the valence band and are ascribed to the divacancy V2 (0/+) and the carbon interstitial-carbon substitutional pair, respectively.

AB - Low to moderately boron-doped silicon crystals were irradiated at room temperature with a 2.0-MeV electron beam and studied by means of deep-level transient spectroscopy. New dominant hole traps H(0.12) and H(0.07) located, respectively, at 0.12 and 0.07 eV above the valence band, and an electron trap E(0.59) located at 0.59 eV below the conduction band are reported. The states H(0.12), produced directly after irradiation, and H(0.07), formed following 400 °C annealing, are observed in samples of low boron contents (∼10 14 cm-3). The state E(0.59), on the other hand, is observed after 400 °C annealing in the moderately boron-doped samples (∼1015 cm-3). Based on the thermal stability and energy position of these states tentative defect identifications are proposed by correlation with published data. Other previously reported hole traps are observed at 0.22 and 0.34 eV above the valence band and are ascribed to the divacancy V2 (0/+) and the carbon interstitial-carbon substitutional pair, respectively.

UR - http://www.scopus.com/inward/record.url?scp=36549094096&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549094096&partnerID=8YFLogxK

U2 - 10.1063/1.342089

DO - 10.1063/1.342089

M3 - Article

VL - 64

SP - 6301

EP - 6305

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

ER -