Radiation induced interface states and ESR evidence for room temperature interactions between molecular hydrogen and silicon dangling bonds in amorphous SiO2 Films on Si

J. F. Conley, Patrick M. Lenahan

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We establish strong experimental evidence linking reactions between molecular hydrogen and E' center hole traps to the radiation induced interface state generation process in metal/oxide/silicon (MOS) devices.

Original languageEnglish (US)
Pages (from-to)215-218
Number of pages4
JournalMicroelectronic Engineering
Volume22
Issue number1-4
DOIs
StatePublished - Jan 1 1993

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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