Radiation induced interface states and ESR evidence for room temperature interactions between molecular hydrogen and silicon dangling bonds in amorphous SiO2 Films on Si

J. F. Conley, Patrick M. Lenahan

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We establish strong experimental evidence linking reactions between molecular hydrogen and E' center hole traps to the radiation induced interface state generation process in metal/oxide/silicon (MOS) devices.

Original languageEnglish (US)
Pages (from-to)215-218
Number of pages4
JournalMicroelectronic Engineering
Volume22
Issue number1-4
DOIs
StatePublished - Jan 1 1993

Fingerprint

Hole traps
Dangling bonds
Molecular interactions
Interface states
Silicon oxides
Silicon
Amorphous films
metal oxides
Paramagnetic resonance
Hydrogen
Metals
traps
Radiation
silicon
room temperature
hydrogen
radiation
interactions
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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abstract = "We establish strong experimental evidence linking reactions between molecular hydrogen and E' center hole traps to the radiation induced interface state generation process in metal/oxide/silicon (MOS) devices.",
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