Radiation-induced interface traps in MOS devices: Capture cross section and density of states of Pb1 silicon dangling bond centers

Patrick M. Lenahan, N. A. Bohna, J. P. Campbell

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Pb centers dominate radiation-induced interface defects. On the (100) Si/SiO2 interface, the Pb0 center dominates radiation damage, but another center, the Pb1, plays a secondary role. Neither the electronic density of states nor the capture cross section of this center are well established. This study provides information about both the density of states and capture cross section of Pb1. The study also shows that some refinement is required in techniques utilized to separate interface trap space charge from space charge in the oxide.

Original languageEnglish (US)
Pages (from-to)2708-2712
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume49 I
Issue number6
DOIs
StatePublished - Dec 1 2002

All Science Journal Classification (ASJC) codes

  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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