Radiation-induced oxide charge in low- and high-H 2 environments

Nicole L. Rowsey; Mark E. Law; Ronald D. Schrimpf; Daniel M. Fleetwood; Blair Richard Tuttle; Sokrates T. Pantelides

doi:10.1109/RADECS.2011.6131384

Radiation-induced oxide charge in low- and high-H ₂ environments

Nicole L. Rowsey, Mark E. Law, Ronald D. Schrimpf, Daniel M. Fleetwood, Blair Richard Tuttle, Sokrates T. Pantelides

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Electronic structure calculations and irradiation measurements are used to obtain insight into oxide trapped charge mechanisms in varying hydrogen ambients. Hole trapping dominates for typical H ₂ densities, but protons can dominate at high H ₂ densities.

Original language	English (US)
Title of host publication	RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings
Pages	51-53
Number of pages	3
DOIs	https://doi.org/10.1109/RADECS.2011.6131384
State	Published - 2011
Event	12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011 - Sevilla, Spain Duration: Sep 19 2011 → Sep 23 2011

Other

Other	12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011
Country/Territory	Spain
City	Sevilla
Period	9/19/11 → 9/23/11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Radiation

Access to Document

10.1109/RADECS.2011.6131384

Cite this

@inproceedings{a785dcb346eb48b4b77224dc686f0dae,

title = "Radiation-induced oxide charge in low- and high-H 2 environments",

abstract = "Electronic structure calculations and irradiation measurements are used to obtain insight into oxide trapped charge mechanisms in varying hydrogen ambients. Hole trapping dominates for typical H 2 densities, but protons can dominate at high H 2 densities.",

author = "Rowsey, {Nicole L.} and Law, {Mark E.} and Schrimpf, {Ronald D.} and Fleetwood, {Daniel M.} and Tuttle, {Blair Richard} and Pantelides, {Sokrates T.}",

year = "2011",

doi = "10.1109/RADECS.2011.6131384",

language = "English (US)",

isbn = "9781457705878",

pages = "51--53",

booktitle = "RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings",

note = "12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011 ; Conference date: 19-09-2011 Through 23-09-2011",

}

Rowsey, NL, Law, ME, Schrimpf, RD, Fleetwood, DM, Tuttle, BR & Pantelides, ST 2011, Radiation-induced oxide charge in low- and high-H ₂ environments. in RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings., 6131384, pp. 51-53, 12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011, Sevilla, Spain, 9/19/11. https://doi.org/10.1109/RADECS.2011.6131384

TY - GEN

T1 - Radiation-induced oxide charge in low- and high-H 2 environments

AU - Rowsey, Nicole L.

AU - Law, Mark E.

AU - Schrimpf, Ronald D.

AU - Fleetwood, Daniel M.

AU - Tuttle, Blair Richard

AU - Pantelides, Sokrates T.

PY - 2011

Y1 - 2011

N2 - Electronic structure calculations and irradiation measurements are used to obtain insight into oxide trapped charge mechanisms in varying hydrogen ambients. Hole trapping dominates for typical H 2 densities, but protons can dominate at high H 2 densities.

AB - Electronic structure calculations and irradiation measurements are used to obtain insight into oxide trapped charge mechanisms in varying hydrogen ambients. Hole trapping dominates for typical H 2 densities, but protons can dominate at high H 2 densities.

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U2 - 10.1109/RADECS.2011.6131384

DO - 10.1109/RADECS.2011.6131384

M3 - Conference contribution

AN - SCOPUS:84860160788

SN - 9781457705878

SP - 51

EP - 53

BT - RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings

T2 - 12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011

Y2 - 19 September 2011 through 23 September 2011

ER -