Radiation-induced oxide charge in low-and high-h 2 environments

Nicole L. Rowsey, Mark E. Law, Ronald D. Schrimpf, Daniel M. Fleetwood, Blair R. Tuttle, Sokrates T. Pantelides

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Electronic structure calculations and irradiation measurements are used to obtain insight into oxide trapped charge mechanisms in varying hydrogen ambients. Quantitative agreement between measured and simulated oxide and interface-trap charge densities is obtained over a wide range of H 2 concentrations by implementing first-principles calculations of the energetics, and dynamics of charge transport and trapping, into TCAD simulations of irradiated MOS structures. Hole trapping dominates for typical H 2 densities, but protons can dominate at high H 2 densities. The rate of the interface trap reaction, in which protons that are liberated from charged oxygen vacancies by molecular hydrogen form dangling bonds on the interface, is found to play a key role in determining the relative concentrations of oxide and interface-trap charge densities.

Original languageEnglish (US)
Article number6153410
Pages (from-to)755-759
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume59
Issue number4 PART 1
DOIs
StatePublished - 2012

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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