Radiation-induced trivalent silicon defect buildup at the si-sio2 interface in MOS structures

P. M. Lenahan, K. L. Brower, P. V. Dressendorfer, W. C. Johnson

Research output: Contribution to journalArticle

63 Scopus citations

Abstract

Electron spin resonance and capacitance versus voltage measurements demonstrate approximately a one-to-one correspondence between the density of radiation-induced trivalent silicon defects at the (111) Si-SiO2 interface and the density of radiation induced electronic interface states.

Original languageEnglish (US)
Pages (from-to)4105-4106
Number of pages2
JournalIEEE Transactions on Nuclear Science
Volume28
Issue number6
DOIs
StatePublished - Dec 1981

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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