Radio frequency plasma annealing of positive charge generated by Fowler-Nordheim electron injection in buried oxides in silicon

A. N. Nazarov, V. I. Kilchytska, I. P. Barchuk, A. S. Tkachenko, S Ashok

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Abstract

Positive charge was generated in the buried oxide (BOX) layer of silicon implanted by oxygen (SIMOX) silicon-on-insulator (SOI) structures by Fowler-Nordheim electron injection under high electric field. Radio-frequency plasma was employed to anneal out the positive charge. Experiments showed that the positive charge is thermally stable at annealing temperatures of up to 400 °C.

Original languageEnglish (US)
Pages (from-to)1254-1261
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number3
DOIs
StatePublished - May 1 2000

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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