Positive charge was generated in the buried oxide (BOX) layer of silicon implanted by oxygen (SIMOX) silicon-on-insulator (SOI) structures by Fowler-Nordheim electron injection under high electric field. Radio-frequency plasma was employed to anneal out the positive charge. Experiments showed that the positive charge is thermally stable at annealing temperatures of up to 400 °C.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - May 1 2000|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering