Raman scattering from Si1-xGex alloy nanowires

Qiujie Lu, Kofi W. Adu, Humberto R. Gutiérrez, Gugang Chen, Kok Keong Lew, Pramod Nimmatoori, Xi Zhang, Elizabeth C. Dickey, Joan Marie Redwing, Peter C. Eklund

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23 Scopus citations

Abstract

We present Raman scattering results on crystalline Si1-xGe x nanowires (0 < x < 1) grown by the vapor-liquid-solid growth mechanism using chemical vapor deposition. Typical nanowire diameters and lengths were in the range 80-110 nm and 15-40 μm, respectively. Three strong Raman bands were observed and identified as perturbed Si-Si (∼500 cm -1) modes, perturbed Ge-Ge (∼280 cm-1) modes, and intermediate frequency (∼400 cm-1) modes assigned to Si-Ge clusters. A broad band is observed in the range ∼75-110 cm-1 that is assigned to transverse acoustic modes. The compositional dependence of these Raman bands is similar to what is observed in bulk material and is also found to be in very good agreement with the recently calculated vibrational density of states for Si1-xGex nanoparticles.

Original languageEnglish (US)
Pages (from-to)3209-3215
Number of pages7
JournalJournal of Physical Chemistry C
Volume112
Issue number9
DOIs
StatePublished - Mar 6 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Surfaces, Coatings and Films
  • Physical and Theoretical Chemistry

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