Raman topography and strain uniformity of large-area epitaxial graphene

Joshua A. Robinson, Conor P. Puls, Neal E. Staley, Joseph P. Stitt, Mark A. Fanton, Konstantin V. Emtsev, Thomas Seyller, Ying Liu

Research output: Contribution to journalArticlepeer-review

128 Scopus citations

Abstract

We report results of Raman spectroscopy studies of large-area epitaxial graphene grown on SiC. Our work reveals unexpectedly large variation In Raman shift resulting from graphene strain inhomogeneity, which Is shown to be correlated with physical topography by coupling Raman spectroscopy with atomic force microscopy. We show that graphene strain can vary over a distance shorter than 300 nm and may be uniform only over roughly 1 μm. We show that nearly strain-free graphene is possible even in epitaxial graphene.

Original languageEnglish (US)
Pages (from-to)964-968
Number of pages5
JournalNano letters
Volume9
Issue number3
DOIs
StatePublished - Mar 11 2009

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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