Rapid alloying of tetrahedral diamagnetic semiconductors in microwave H field

Charu Lata Dube, Subhash C. Kashyap, D. C. Dube, D. K. Agrawal

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Silicon germanium alloy has successfully been synthesized in a 2.45 GHz, single mode microwave H field at 900 C in 5 min in the Microwave Laboratory. The phase formation occurs at a temperature which is lower by 400 C than its equilibrium temperature. In the present paper an attempt has been made to understand the mechanism of rapid alloying of Si and Ge at a much lower temperature in microwave H field. The shape and size of starting particles play a significant role in microwave absorption. It is proposed that the interaction of H field at 2.45 GHz first induces B-field in the irregular shaped precursor powder particles of different sizes; the gradient in induced magnetic flux generates circulating electric field. Consequently, dipolar losses are induced by local electric field in the pellet, which generate heat and culminate into rapid alloying of Si and Ge (nonferric diamagnetic elements). Furthermore, magnetic reorientation of diamagnetic fine particles by H-field at 2.45 GHz assists in an efficient heating of the Si and Ge powders and results in alloy formation at a much lower temperature.

Original languageEnglish (US)
Pages (from-to)75-78
Number of pages4
JournalJournal of Alloys and Compounds
Volume571
DOIs
StatePublished - Sep 15 2013

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Rapid alloying of tetrahedral diamagnetic semiconductors in microwave H field'. Together they form a unique fingerprint.

  • Cite this