Rapid silicon carbide micro-crystal growth by high power CO2 laser

Haonan Zhou, Chang Jiang Chen, Wenbin Zhu, Ju Hung Chao, Shizhuo Yin

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    This paper presents an ultra-fast growth of silicon carbide crystal with the size up to 50 μm from SiC nanopowders. By using a CO2 laser with a power of 30W to heat the silicon carbide nanopowders in a vacuum chamber, the nanopowders tends to congregate together to form larger particles first. Following the slow cooling process, the congregate formation would further transform to final SiC micro-crystals. The two types of final products grown from quenching process and slow cooling process were analyzed by SEM. The lattice structure of final SiC micro-crystal was determined to be hexagonal structure according to the XRD analysis.

    Original languageEnglish (US)
    Title of host publicationPhotonic Fiber and Crystal Devices
    Subtitle of host publicationAdvances in Materials and Innovations in Device Applications XI
    EditorsShizhuo Yin, Ruyan Guo
    PublisherSPIE
    Volume10382
    ISBN (Electronic)9781510612211
    DOIs
    StatePublished - Jan 1 2017
    EventPhotonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI 2017 - San Diego, United States
    Duration: Aug 6 2017Aug 7 2017

    Other

    OtherPhotonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI 2017
    CountryUnited States
    CitySan Diego
    Period8/6/178/7/17

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Computer Science Applications
    • Applied Mathematics
    • Electrical and Electronic Engineering

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  • Cite this

    Zhou, H., Chen, C. J., Zhu, W., Chao, J. H., & Yin, S. (2017). Rapid silicon carbide micro-crystal growth by high power CO2 laser. In S. Yin, & R. Guo (Eds.), Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI (Vol. 10382). [103820L] SPIE. https://doi.org/10.1117/12.2276513