Abstract
Aluminum nitride thin films have been prepared at room temperature by reactive ion beam sputtering for potential use as a passivant and diffusion/anneal cap in compound semiconductor technology. The electrical and optical pro-perties of these films have been studied along with the in-fluence of thermal annealing on the material characteristics. The quality of the films has also been found to improve in the presence of atomic hydrogen during the deposition.
Original language | English (US) |
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Pages (from-to) | 405-418 |
Number of pages | 14 |
Journal | Journal of Electronic Materials |
Volume | 14 |
Issue number | 4 |
DOIs | |
State | Published - Jul 1985 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry