Reactive ion beam deposition of aluminum nitride thin films

S. Bhat; S. Ashok; S. J. Fonash; L. Tongson

doi:10.1007/BF02654015

Reactive ion beam deposition of aluminum nitride thin films

S. Bhat, S. Ashok, S. J. Fonash, L. Tongson

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Aluminum nitride thin films have been prepared at room temperature by reactive ion beam sputtering for potential use as a passivant and diffusion/anneal cap in compound semiconductor technology. The electrical and optical pro-perties of these films have been studied along with the in-fluence of thermal annealing on the material characteristics. The quality of the films has also been found to improve in the presence of atomic hydrogen during the deposition.

Original language	English (US)
Pages (from-to)	405-418
Number of pages	14
Journal	Journal of Electronic Materials
Volume	14
Issue number	4
DOIs	https://doi.org/10.1007/BF02654015
State	Published - Jul 1985

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/BF02654015

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@article{4289e91957c64d99b6ed1ee154bb9a02,

title = "Reactive ion beam deposition of aluminum nitride thin films",

abstract = "Aluminum nitride thin films have been prepared at room temperature by reactive ion beam sputtering for potential use as a passivant and diffusion/anneal cap in compound semiconductor technology. The electrical and optical pro-perties of these films have been studied along with the in-fluence of thermal annealing on the material characteristics. The quality of the films has also been found to improve in the presence of atomic hydrogen during the deposition.",

author = "S. Bhat and S. Ashok and Fonash, {S. J.} and L. Tongson",

year = "1985",

month = jul,

doi = "10.1007/BF02654015",

language = "English (US)",

volume = "14",

pages = "405--418",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "4",

}

TY - JOUR

T1 - Reactive ion beam deposition of aluminum nitride thin films

AU - Bhat, S.

AU - Ashok, S.

AU - Fonash, S. J.

AU - Tongson, L.

PY - 1985/7

Y1 - 1985/7

N2 - Aluminum nitride thin films have been prepared at room temperature by reactive ion beam sputtering for potential use as a passivant and diffusion/anneal cap in compound semiconductor technology. The electrical and optical pro-perties of these films have been studied along with the in-fluence of thermal annealing on the material characteristics. The quality of the films has also been found to improve in the presence of atomic hydrogen during the deposition.

AB - Aluminum nitride thin films have been prepared at room temperature by reactive ion beam sputtering for potential use as a passivant and diffusion/anneal cap in compound semiconductor technology. The electrical and optical pro-perties of these films have been studied along with the in-fluence of thermal annealing on the material characteristics. The quality of the films has also been found to improve in the presence of atomic hydrogen during the deposition.

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U2 - 10.1007/BF02654015

DO - 10.1007/BF02654015

M3 - Article

AN - SCOPUS:0022093586

VL - 14

SP - 405

EP - 418

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 4

ER -

Reactive ion beam deposition of aluminum nitride thin films

Abstract

All Science Journal Classification (ASJC) codes

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