Reactive ion beam deposition of aluminum nitride thin films

S. Bhat, S. Ashok, S. J. Fonash, L. Tongson

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Aluminum nitride thin films have been prepared at room temperature by reactive ion beam sputtering for potential use as a passivant and diffusion/anneal cap in compound semiconductor technology. The electrical and optical pro-perties of these films have been studied along with the in-fluence of thermal annealing on the material characteristics. The quality of the films has also been found to improve in the presence of atomic hydrogen during the deposition.

Original languageEnglish (US)
Pages (from-to)405-418
Number of pages14
JournalJournal of Electronic Materials
Issue number4
StatePublished - Jul 1985

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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